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Problem 1: Figure shows a BJT biasing circuit with ß =100, VBE = 0.7 V, VCESat 0.2 V, and VB = 1 V. For Vc = 2 V calculate IB, Ic, and Rc. B) Find a new Rc for which the transistor stays at the edge of the saturation. r Vcc=5 V

Problem 1: Figure shows a BJT biasing circuit with ß =100, VBE = 0.7 V, VCESat 0.2 V, and VB = 1 V. For Vc = 2 V calculate IB, Ic, and Rc. B) Find a new Rc for which the transistor stays at the edge of the saturation. r Vcc=5 V

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Problem 1: Figure shows a BJT biasing circuit with 3 =100, VBE = 0.7 V, VCESat = 0.2 V, and VB = 1 V. A) For Vc = 2 V calculate IB, Ic, and Rc. B) Find a new Rc for which the transistor stays at the edge of the saturation. Vcc 5 V Re VB RB ≤ 100 Ka, Ve { RE 1-N²-5V
Transcribed Image Text:Problem 1: Figure shows a BJT biasing circuit with 3 =100, VBE = 0.7 V, VCESat = 0.2 V, and VB = 1 V. A) For Vc = 2 V calculate IB, Ic, and Rc. B) Find a new Rc for which the transistor stays at the edge of the saturation. Vcc 5 V Re VB RB ≤ 100 Ka, Ve { RE 1-N²-5V
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