Consider the NPN BJT made of silicon is in the forward active region, with lç = 10 JA, doping concentrations NE = 1018 cm-3, NB thicknesses WE = 0.5 µm, WB = 0.25 µm, and Wc = 2 µm; and diffusion constants DPE %3D 1017 cm3, and Nc = 1016 cm³3; %3D %3D = 20 cm2/s, and Dpc = 2 cm?/s, DnB cross-sectional area A = 1 um². Assume that recombination within the BJT is small = 12 cm?/s, and Lnb = 1 um. The (i.e., diffusion lengths are much larger than the thicknesses of each layer). Calculate the emitter injection efficiency y, the base transport factor ß', the common emitter current gain Bdc, the common base current gain ade, respectively.
Consider the NPN BJT made of silicon is in the forward active region, with lç = 10 JA, doping concentrations NE = 1018 cm-3, NB thicknesses WE = 0.5 µm, WB = 0.25 µm, and Wc = 2 µm; and diffusion constants DPE %3D 1017 cm3, and Nc = 1016 cm³3; %3D %3D = 20 cm2/s, and Dpc = 2 cm?/s, DnB cross-sectional area A = 1 um². Assume that recombination within the BJT is small = 12 cm?/s, and Lnb = 1 um. The (i.e., diffusion lengths are much larger than the thicknesses of each layer). Calculate the emitter injection efficiency y, the base transport factor ß', the common emitter current gain Bdc, the common base current gain ade, respectively.
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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