Consider the NPN BJT made of silicon is in the forward active region, with lç = 10 JA, doping concentrations NE = 1018 cm-3, NB thicknesses WE = 0.5 µm, WB = 0.25 µm, and Wc = 2 µm; and diffusion constants DPE %3D 1017 cm3, and Nc = 1016 cm³3; %3D %3D = 20 cm2/s, and Dpc = 2 cm?/s, DnB cross-sectional area A = 1 um². Assume that recombination within the BJT is small = 12 cm?/s, and Lnb = 1 um. The (i.e., diffusion lengths are much larger than the thicknesses of each layer). Calculate the emitter injection efficiency y, the base transport factor ß', the common emitter current gain Bdc, the common base current gain ade, respectively.

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Consider the NPN BJT made of silicon is in the forward active region, with lc = 10
1018 cm-3, NB
1017 cm3, and Nc = 1016 cm3;
HA, doping concentrations NE
thicknesses We = 0.5 µm, WB = 0.25 µm, and Wc = 2 µm; and diffusion constants
%D
%3D
%D
%3D
2 cm?/s, DnB
= 20 cm?/s, and Dpc
= 12 cm?/s, and Lnb
DPE =
cross-sectional area A = 1 µm?. Assume that recombination within the BJT is small
1 um. The
(i.e., diffusion lengths are much larger than the thicknesses of each layer).
Calculate the emitter injection efficiency y, the base transport factor B', the common
emitter current gain Bdc, the common base current gain adc, respectively.
Transcribed Image Text:Consider the NPN BJT made of silicon is in the forward active region, with lc = 10 1018 cm-3, NB 1017 cm3, and Nc = 1016 cm3; HA, doping concentrations NE thicknesses We = 0.5 µm, WB = 0.25 µm, and Wc = 2 µm; and diffusion constants %D %3D %D %3D 2 cm?/s, DnB = 20 cm?/s, and Dpc = 12 cm?/s, and Lnb DPE = cross-sectional area A = 1 µm?. Assume that recombination within the BJT is small 1 um. The (i.e., diffusion lengths are much larger than the thicknesses of each layer). Calculate the emitter injection efficiency y, the base transport factor B', the common emitter current gain Bdc, the common base current gain adc, respectively.
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