Consider an NMOS transistor fabricated in a 0.18-μm process with L = 0.18 μm and W = 2 μm. The process technology is specified to have Cox = 8 fF/μm2, μn = 450 cm2/V.s and Vtn= 0.55V. (b) If VGS is kept constant, find VDS that results in ID= 50 μA.

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