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Consider an NMOS transistor fabricated in a 0.18-µm process with L = 0.18 µm and W = 2 µm. The process technology is specified to have C = 8.6 fF/µm², µ, =450 cm/V. s, and V = 0.5 V. ох (a) Find Ves and Vps that result in the MOSFET operating at the edge of saturation with I, = 100 µ A. %3|

Consider an NMOS transistor fabricated in a 0.18-µm process with L = 0.18 µm and W = 2 µm. The process technology is specified to have C = 8.6 fF/µm², µ, =450 cm/V. s, and V = 0.5 V. ох (a) Find Ves and Vps that result in the MOSFET operating at the edge of saturation with I, = 100 µ A. %3|

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Consider an NMOS transistor fabricated in a 0.18-µm process with L = 0.18 µm and W = 2 µm. The process technology is specified to have C = 8.6 fF/um", u, = 450 cm/V. s, and V,=0.5 V. (a) Find Vcs and Vps that result in the MOSFET operating at the edge of saturation with I, = 100 µ A.
Transcribed Image Text:Consider an NMOS transistor fabricated in a 0.18-µm process with L = 0.18 µm and W = 2 µm. The process technology is specified to have C = 8.6 fF/um", u, = 450 cm/V. s, and V,=0.5 V. (a) Find Vcs and Vps that result in the MOSFET operating at the edge of saturation with I, = 100 µ A.
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