Consider an n-channel MOSFET with parameters:K, = 0.25 mAN?, VIN = 1 V, A = 0, Cd = 0.04 pF and Cgs = 0.2 pFIf the transistor is biased at Vas = 3 V, the unity-gain bandwidth of an FET will be(a) 626 MHz(c) 663 MHzGS(b) 646 MHz(d) 683 MHz

Given; N-channel MOSFET Kn=0.25 mA/V2VTN=1 Vλ=0Cgd=0.04 pFCgs=0.2 pFVGS=3 V

Consider an n-channel MOSFET with parameters: K, = 0.25 mAN, VIN = 1 V, 2 = 0, Cgd = 0.04 pF and Cg = 0.2 pF If the transistor is biased at Vas = 3 V, the unity-gain bandwidth of an FET will be (a) 626 MHz (b) 646 MHz (c) 663 MHz (d) 683 MHz

Consider an n-channel MOSFET with parameters: K, = 0.25 mAN, VIN = 1 V, 2 = 0, Cgd = 0.04 pF and Cg = 0.2 pF If the transistor is biased at Vas = 3 V, the unity-gain bandwidth of an FET will be (a) 626 MHz (b) 646 MHz (c) 663 MHz (d) 683 MHz

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Concept explainers

BJT (Bipolar Junction Transistor)

A BJT is a semiconductor device with 3 terminals that consist of a p-n junction diode that can amplify the signal or current. It is a current-controlled device. The three BJT terminals are base, collector, and emitter. The BJT works with the charge carrier, the two type of carriers in the BJT are holes and electrons, the charge carriers flow by the process of recombination. The signal to be amplifier is generally given as the input at the base terminal and an amplified form of it is available at the collector terminal.

Question

Consider an n-channel MOSFET with parameters:
K, = 0.25 mAN?, VIN = 1 V, A = 0, Cd = 0.04 pF and Cgs = 0.2 pF
If the transistor is biased at Vas = 3 V, the unity-gain bandwidth of an FET will be
(a) 626 MHz
(c) 663 MHz
GS
(b) 646 MHz
(d) 683 MHz

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