Solve q 25 all part a,b,c Vas = 0 VDss = 9 mAVerticalSens.1 mAper div.VGs = -0.5 VHorizontalSens.1 yper div.VGs =-1 VIpss = 4.5 mA500 mV(VGs = -0.9 V)per step.VGs =-1.5 V8m2 mper div.1 mAdivVas =-2 V1 VVp = - 3 VdivFIG. 6.22Drain characteristics for a 2N4416 JFET transistor as displayed on a curve tracer.in Table 6.1. That is, when In = Ipss/2, then VGs = 0.3Vp. For the characteristics ofFig. 6.22, Ip = Ipss/2 = 9 mA/2 = 4.5 mA, and, as visible from Fig. 6.22, the corre-sponding level of VGs is about -0.9 V. Using this information, we find thatVp = VGs/0.3 = -0.9 V/0.3 = -3 V, which will be our choice for this device. Usingthis value, we find that at VGs = -2 V,IMPORTANT 395RELATIONSHIPSlo = las(1 - )- 9 ma (1 -In = IpssVGsVp-2 V= 9 mA= 1 mAas supported by Fig. 6.22.At VGs = -2.5 V, Shockley's equation results in Ip = 0.25 mA, with Vp = -3 V,clearly revealing how quickly the curves contract near Vp. The importance of the parametergm and how it is determined from the characteristics of Fig. 6.22 are described in Chapter 8when small-signal ac conditions are examined. 2ss = 12 mA and Vp = -4 V, sketch the transfer characteristics for the JFETne drain characteristics for the device of part (a).= 9 mA and Vp = -4 V, determine Ip when:V.2 V.4 V.6 V.= 16 mA and Vp = -5 V, sketch the transfer characteristics using the data points. Determine the value of Ip at Ves = -3 V from the curve, and compare it to thenined using Shockley's equation. Repeat the above for Vas = -1 V.alar JFET if Ip = 4 mA when Ves = -3 V, determine Vp if Ipss = 12 mA.= 6 mA and Vp = -4.5 V:ne lp at Vas = -2 and -3.6 V.ne Vas at Ip- 3 and 5.5 mA.oint of Ip, = 3 mA and VGs = -3 V, determine Ipss if Vp = -6 V.17. Ap-channel JFET has device parameters of Ipss = 7.5 mA and Vp = 4 V. Sketch the transfercharacteristics.6.4 Specification Sheets (IFETS)18. Define the region of operation for the 2N5457 JFET of Fig. 6.20 using the range of Ipss and Vpprovided. That is, sketch the transfer curve defined by the maximum Inss and Vp and the transfercurve for the minimum Ipss and Vp. Then, shade in the resulting area between the two curves.19. For the 2N5457 JFET of Fig. 6.20, what is the power rating at a typical operating temperatureof 45°C using the 5.0 mW/"C derating factor.20. Define the region of operation for the JFET of Fig. 6.54 if VDs. = 30 V and Po, = 100 mW.6.5 Instrumentation21. Using the characteristics of Fig. 6.22, determine Ip at VGs = -0.7 V and Vps = 10 v.22. Referring to Fig. 6.22, is the locus of pinch-off values defined by the region of Vps < |Vp| = 3 V?23. Determine Vp for the characteristics of Fig. 6.22 using Ipss and Ip at some value of VGs. Thatis, simply substitute into Shockley's equation and solve for Vp. Compare the result to theassumed value of -3 V from the characteristics.24. Using Ipss - 9 mA and Vp -3 V for the characteristics of Fig. 6.22, calculate Ip at Ves=1 V using Shockley's equation and compare to the level in Fig. 6.22.25. a. Calculate the resistance associated with the JFET of Fig. 6.22 for VGs = 0 V fromIp = 0 mA to 4 mA.b. Repcat part (a) for VGs = -0.5 V from Ip = 0 to 3 mA.c. Assigning the label r, to the result of part (a) and ra to that of part (b), use Eq. (6.1) todetermine ra and compare to the result of part (b).6.7 Depletion-Type MOSFET26. a. Sketch the basic construction of a p-channel depletion-type MOSFET.b. Apply the proper drain-to-source voltage and sketch the flow of clectrons for VGs = 0 v.27. In what ways is the construction of a depletion-type MOSFET similar to that of a JFET? Inwhat ways is it different?28. Explain in your own words why the application of a positive voltage to the gate of an n-channeldepletion-type MOSFET will result in a drain current exceeding Ipss-29. Given a depletion-type MOSFET with Ipss = 6 mA and Vp = -3 V, determine the drain cur-rent at Ves -1,0, 1, and 2 V. Compare the difference in current levels between -1 V andOV with the difference between 1 V and 2 V. In the positive VGs region, does the drain currentincrease at a significantly higher rate than for negative values? Does the Ip curve become moreand more vertical with increasing positive values of Vas? Is there a linear or a nonlincar rela-tionship between Ip and Vas? Explain.30. Sketch the transfer and drain characteristics of an n-channel depletion-type MOSFET withInss- 12 mA and Vp- -8 V for a range of Ves -Vp to VGs- 1 V31. Given Ip = 14 mA and VGs = 1 V, determine Vp if Ipss = 9.5 mA for a depletion-typeMOSFET.32. Given Ip = 4 mA at Ves = -2 V, determine Ipss if Vp = -5 V.33. Using an average value of 2.9 mA for the Ipss of the 2N3797 MOSFET of Fig. 6.31, determinethe level of VGs that will result in a maximum drain current of 20 mA if Vp = -5 V.34. If the drain current for the 2N3797 MOSFET of Fig. 6.31 is 8 mA, what is the maximum per-missible value of Vps utilizing the maximum power rating?6.8 Enhancement-Type MOSFET35. a. What is the significant difference between the construction of an enhancement-type MOSFETand a depletion-type MOSFET?b. Sketch a p-channel enhancement-type MOSFET with the proper biasing applied(Vps > 0V, Vas > Vr) and indicate the channel, the direction of electron flow, and theresulting depletion region.c. In your own words, briefly describe the basic operation of an enhancement-type MOSFET.36. a. Sketch the transfer and drain characteristics of an n-channel enhancement-type MOSFET ifVy = 3.5 V and k = 0.4 x 10 A/V?.b. Repeat part (a) for the transfer characteristics if Vr is maintained at 3.5 V but k is increasedby 100% to 0.8 x 10A/V?.OnJ62

The resistance value can be obtained from the graph using the ratio of voltage to the current.

Answered: 25. a. Calculate the resistance…

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...