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Consider a uniformly doped GaAs pn junction with doping concentrations of N,-5 X 1018 cm-3 and N, 5 X 1016 cm-3, (a) Plot the built in potential barrier voltage, V. verses temperature for 2002T2500K. (Assume that n-1.8 X 106 cm-3) for bi' every 100 K change in temperature. (b) Repeat (a) when N, and N, values are equal to 5 X 1016 cm3,

Consider a uniformly doped GaAs pn junction with doping concentrations of N,-5 X 1018 cm-3 and N, 5 X 1016 cm-3, (a) Plot the built in potential barrier voltage, V. verses temperature for 2002T2500K. (Assume that n-1.8 X 106 cm-3) for bi' every 100 K change in temperature. (b) Repeat (a) when N, and N, values are equal to 5 X 1016 cm3,

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Consider a uniformly doped GaAS pn junction with doping concentrations of N,- 5 (10) X 1018 cm3 and N, - 5 X 1016 cm3, (a) Plot the built in potential barrier voltage. verses temperature for 2002T2500K. (Assume that n-1.8 X 106 cm-3) for bi every 100 K change in temperature. (b) Repeat (a) when N, and N, values are equal to 5 X 1016 cm-3, --End-.
Transcribed Image Text:Consider a uniformly doped GaAS pn junction with doping concentrations of N,- 5 (10) X 1018 cm3 and N, - 5 X 1016 cm3, (a) Plot the built in potential barrier voltage. verses temperature for 2002T2500K. (Assume that n-1.8 X 106 cm-3) for bi every 100 K change in temperature. (b) Repeat (a) when N, and N, values are equal to 5 X 1016 cm-3, --End-.
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