Consider a silicon pn junction of doping concentrations of 5x1016 cm-3 and at the p-side and n-side, respectively. If the pn-junction is forward- 2x1015 cm-3 biased by a voltave V = 0,5 V, considering a steady state, solve the continuity equation in the neutral p-side to find the electron concentration as a function of distance x. ii find the elctron current density Ja in the p-side at a distance 10 nm from the i. edge of the depletion layer.

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Consider a silicon pn junction of doping concentrations of 5x1016 cm-3 and
2x1015 cm-3 at the p-side and n-side, respectively. If the pn-junction is forward-
biased by a voltave V= 0.5 V, considering a steady state,
solve the continuity equation in the neutral p-side to find the electron
concentration as a function of distance.
find the elctron current density Jn in the p-side at a distance 10 nm from the
i.
ii.
edge of the depletion layer.
Transcribed Image Text:Consider a silicon pn junction of doping concentrations of 5x1016 cm-3 and 2x1015 cm-3 at the p-side and n-side, respectively. If the pn-junction is forward- biased by a voltave V= 0.5 V, considering a steady state, solve the continuity equation in the neutral p-side to find the electron concentration as a function of distance. find the elctron current density Jn in the p-side at a distance 10 nm from the i. ii. edge of the depletion layer.
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