Consider a semiconductor with a bandgap of 1.42 eV with a uniform electric field of1 × 106 V/m pointing along the positive x-axis. Draw the CB and VB as a function of positionalong the x-axis. Assume that the length of this isolated piece of semiconductor in the x-direction is 10 μm. An electron is placed at the center of this semiconductor with no KE (KE =0) at time t = 0. If the electron does not either gain or lose total energy, plot the x-location ofthis electron with time. What is the maximum KE that this electron can have at any time? Inthe plot of the CB and VB, indicate the location of the electron when the KE is maximum.Neglect gravitational potential energy.

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Answered: Consider a semiconductor with a bandgap…

Chemistry & Chemical Reactivity

9th Edition

ISBN:9781133949640

Author:John C. Kotz, Paul M. Treichel, John Townsend, David Treichel

Publisher:John C. Kotz, Paul M. Treichel, John Townsend, David Treichel

Chapter12: The Solid State

Section12.4: Bonding In Metals And Semiconductors

Problem 1RC

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8.96 A business manager wants to provide a wider range of p- and n-type semiconductors as a strategy to enhance sales. You are the lead materials engineer assigned to communicate with this manager. How would you explain why there are more ways to build a p-type semiconductor from silicon than there are ways to build an n-type semiconductor from silicon?
8.97 The doping of semiconductors can be done with enough precision to tune the size of the band gap in the material. Generally, in order to have a larger band gap, the dopant should be smaller than the main material. If you are a materials engineer and need a semiconductor that has lower conductivity thin pure silicon, what clement or elements could you use as your dopant? (You do not want either an n- or a p- type material) Explain your reasoning.
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Silicon (Si) and germanium (Ge) can be used as semiconducting materials. The band gap between the conduction band and valence band is measured in electron volts, eV. 1 eV = 1.6022 × 10⁻¹⁹J. The band gap of each semiconductor was measured, and the two values were found to be 0.69 eV and 1.12 eV. Which of the two values belongs to Ge? A) 0.69 eV B) 1.12 eV C) Cannot be determined without further information.
10. Which of the following is known as indirect band gap semiconductors? Germanium Nickel Platinum Carbon
For each of the following pairs of semiconductors, pick which one would have the larger bandgap. Explain your answer. i. ZnS and ZnSe ii. Si and AlP iii. GaN and InP
Identify 2 elements that would lead to an n-type semiconductor when added in trace amounts to silicon. Explain your response.
The number of electrons excited to the conduction band per cubic centimeter in a semiconductor can be estimated from the following equation: ne = (4.8 × 10'5 cm¯³ K¯¥2) T/2 e¯E{2RT) K¯32) T³² e¯E«M2RT) п
20. A unit cell has the dimensions a = 4 Å, b = 6 Å, c = 8 Å, x = ß = 90°, y = 120°. Determine: a) a*, b*, and c* for the reciprocal cell. b) The volume of the real and reciprocal unit cells. c) The spacing between the (210) planes. d) The Bragg angle 0 for reflection from the above planes.
What type of atom is needed as a dopant in an n-type semiconductor? atoms that have more valence electrons than the semiconductor atoms being replaced O atoms that have more electrons and protons than the semiconductor atoms being replaced O atoms that have fewer valence electrons than the semiconductor atoms being replaced O atoms that have fewer electrons and protons than the semiconductor atoms being replaced Why is it called n-type? We add additional electrons, each of which has a negative charge. O we add additional electrons, and semiconductor in result is fully negatively charged. O We add additional neutrons, which has the symbol "p". O We add additional neutrons, and semiconductor in result is fully neutral.

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