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Calculate no for silicon at T = 300K when the Fermi energy is 0.35 eV below the conduction energy band. no= по = 3.79 X 1013 cm-3 no = 1.41 X 1013 cm-3 no = 1.68 X 1010 cm-3 по no = 6.23 X 10⁹ cm-³ -3

Calculate no for silicon at T = 300K when the Fermi energy is 0.35 eV below the conduction energy band. no= по = 3.79 X 1013 cm-3 no = 1.41 X 1013 cm-3 no = 1.68 X 1010 cm-3 по no = 6.23 X 10⁹ cm-³ -3

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Calculate no for silicon at T = 300K when the Fermi energy is 0.35 eV below the conduction energy band. no = 3.79 X 1013 cm-3 по no = 1.41 X 1013 cm -3 no = 1.68 X 1010 cm-3 по no = 6.23 X 10⁹ cm-³
Transcribed Image Text:Calculate no for silicon at T = 300K when the Fermi energy is 0.35 eV below the conduction energy band. no = 3.79 X 1013 cm-3 по no = 1.41 X 1013 cm -3 no = 1.68 X 1010 cm-3 по no = 6.23 X 10⁹ cm-³
Expert Solution
Step 1: Queswtion analysis:

Given:

A silicon at T=300K when the fermi energy is 0.35eV below the conduction energy band. Calculation of n0.

straight E subscript straight c minus straight E subscript straight f equals 0.35 eV and space we space know colon Intrinsic space concentration space of space si space at space straight T equals 300 degree straight K colon space straight n subscript straight i equals 1.5 cross times 10 to the power of 10 space cm to the power of negative 3 end exponent And space Thermal space voltahe space at space 300 degree straight K space straight V subscript straight T equals 25.86 mV space and space KT equals 0.02586 space eV We space know space for space si space at space straight T equals 300 degree straight K colon space straight N subscript straight c equals 2.8 cross times 10 to the power of 19 space cm to the power of negative 3 end exponent

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