C2 R4 22KO 10µF Vs R5 2Vpk 10KQ ~2KHz 0° VCC: 12V R1 22.2KO C3 Vout 10µF Q1 2N2222A R2 1KQ R3 C1 1k0 =1µF Figure 4. (4-a) Assume the DC Current Gain ẞ = 100, analytically calculate the following DC values: The base current Ig. I. II. The collector current Ic. III. The emitter current Iε. IV. The collector-emitter voltage difference VCE V. The base-collector voltage difference VBC (4-b) What is the region of operation for the BJT? (4-c) Assume the AC Current Gain B = 100, and the transistor output resistance between the collector and emitter r = con, analytically calculate the following AC values: I. The voltage gain (no-load). II. The input resistance. III. The output resistance.

C2 R4 22KO 10µF Vs R5 2Vpk 10KQ ~2KHz 0° VCC: 12V R1 22.2KO C3 Vout 10µF Q1 2N2222A R2 1KQ R3 C1 1k0 =1µF Figure 4. (4-a) Assume the DC Current Gain ẞ = 100, analytically calculate the following DC values: The base current Ig. I. II. The collector current Ic. III. The emitter current Iε. IV. The collector-emitter voltage difference VCE V. The base-collector voltage difference VBC (4-b) What is the region of operation for the BJT? (4-c) Assume the AC Current Gain B = 100, and the transistor output resistance between the collector and emitter r = con, analytically calculate the following AC values: I. The voltage gain (no-load). II. The input resistance. III. The output resistance.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

........ (Figure-1) R. RB= 380kN,Rc= 1kN B = 100, VBB = Vcc=12V RB ww Vec CC ......... I, V CE СЕ V ВЕ BB Q-1-b) Describe briefly the input / output characteristics and application of Common Emitter BJT Configuration
I'll give a thumbs up. Pls. help me. ASAP
Using LTSpice, simulate the circuit below, use 2N3904 for the transistor. Part ! DC simulation: Measure VCE and Ic. Use .op for the simulation cmd. Remove all capacitors and input signals first. Part 2 AC simulation: Connect all capacitors now and apply an AC signal at the input with an amplitufe of 1mV and a frequency of 1kHz. Determine the Voltage gain of the circuit by dividing Vo with Vin. Show the output for both the DC and AC analysis. Take a screenshot of the circuit and the output voltages and waveforms. Paste in a word file, write your answers, then save as pdf. 50 kΩ Σ 20 0,5 ΚΩ wwwh 9 Vcc=20 V Ca=1 µF = Cc₂ Cg=50 μF 5.6 kn B=100 Ca IST • 3.3 ΚΩ 5 ΚΩΣ CE
For the circuit given in figure below draw the collector characteristic curves for Ip= 50, 150 and 250 micro amperes on the same graph Re 220 A - Vec 10 V R 10 k Boc= 200 OV-5 V
Fill in the table VB VC VE Ic LE I8 fre IT gm 5V Consider the circuit given at the right. 600k 1.5k =0.7, Vauo, B=165) 100uF Vo 1k 100uF a) Perform DC analysis and calculate all VB =? VC:? branch currents, node voltages, and small signal parameters 3K VE=? Rout b) Draw a small-signal equivalent model n Vin Rin 400K c) Calculate Ri, Rout, and Ay=Vou/Vin -5V
Vcc=15V Q1: BC237 Rc 3.6kQ or BC238 B=200 VBE(on)=0.7V R1 110KQ Rs Cci 1000 4.7µF Cco 4.7µF R2 ·27kΩ RE 1.2kQ RL 12kΩ Vs Rin Rout Figure 1. Common-emitter amplifier. 2)
Q-3. Find the drain-source voltage, Vos, for the E- MOSFET circuit given below. The device parameters are: Ioss = 4 mA and Vm = 2 V. +15V Rp- 2k 4M R1 + Vps 2M R2
In a common base configuration, collector current is 1.95 milliamperes and base current is 0.05 milliamperes. Find the value of alpha dc (adc)? Answer:
Ans
Please show all work, thank you.
04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)
plz answeer Q2