Please correct answer and don't use hand raiting Briefly describe a model of a p-type semiconductor immersed in a 0.1 M H2SO4 acid solutionat equilibrium. (a) Identify the various layers in the semiconductor/solution interface, andthe expected potential difference across this interface. (b) Sketch and explain an ideal i/Ebehavior for a p-type semiconductor in the dark and under illumination.

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Answered: Briefly describe a model of a p-type…

Principles of Modern Chemistry

8th Edition

ISBN:9781305079113

Author:David W. Oxtoby, H. Pat Gillis, Laurie J. Butler

Publisher:David W. Oxtoby, H. Pat Gillis, Laurie J. Butler

Chapter17: Electrochemistry

Section: Chapter Questions

Problem 48P

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Define the following:(i) F-centre (ii) p-type semiconductor(iii) Ferrimagnetism.
6) A unit cell has the following parameters: a = 5Å b = 10 Å, c =15 Å, a = p = 90°, y = 120°. (i) Determine the parameters of the reciprocal cell. (ii) Find the volume of the real and reciprocal cells, (iii) Find the spacing of the (321) planes. (iv) If Cu Ka radiation is used (X = 1.54 Å) what is the angle of diffraction (20) for the (321) reflection?
Two patterns of packing for two different circles of the samesize are shown here. For each structure (a) draw the twodimensionalunit cell; (b) determine the angle between thelattice vectors, g, and determine whether the lattice vectorsare of the same length or of different lengths; and (c) determinethe type of two-dimensional lattice
At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?
The thermal and mechanical processing of materials is an important step in ensuring that they have the appropriate physical properties for their intended application. Suppose a metallic element undergoes a phase transit ion in which its crystal structure changes from cubic close-packed to bodycentredcubic. (a) Does it become more or less dense? (b) By what factor does its density change?
Strontium titanate (SrTiO3) is another wide bandgap semiconductor that has been investigated for use in dyesensitized solar cells. Depending on morphology and pHthe conduction band of SrTiO3 lies around -.2 V vs. SHE.What energies for the HOMO and LUMO of a sensitizingdye would you specify for electron injection into the conduction band of strontium titanate and for water oxidationby the radical cation formed by photoexcitation?
(a) A hypothetical compound MB2 crystallises in the rutile lattice structure. (i) Draw the lattice structure of the unit cell MB2. (ii) Show by calculation that the stoichiometry of the formula is consistent with the structure. (iii) Determine the coordination number of the MB₂ unit cell.
Which of these statements is false?(a) As you go down column 4A in the periodic table, the elementalsolids become more electrically conducting. (b) Asyou go down column 4A in the periodic table, the band gapsof the elemental solids decrease. (c) The valence electroncount for a compound semiconductor averages out to fourper atom. (d) Band gap energies of semiconductors rangefrom ∼0.1 to 3.5 eV. (e) In general, the more polar the bondsare in compound semiconductors, the smaller the band gap.
(b) Calculate the mass of aluminium deposited in electrolysis of AICI3, if a current of 10 A flow for an hour.
(a) You are required to produce a BCC iron structure that will allow no more than 50 g of hydrogen to be lost per year through each square centimeter of the iron at 400°C. If the concentration of hydrogen at one surface is 0.05 H atom per unit cell and 0.001 H atom per unit cell at the second surface, evaluate the minimum thickness of the iron. (b) Zinc is to be diffused into the copper by dipping copper into molten zinc at 450 °C. Evaluate how long it would take to obtain 10 wt% zinc at a depth of 0.5 mm beneath the copper surface. Justify is this commercially feasible? What are the potential technical problems that might encounter if the temperature is raised to 1000 °C? Use Table 1 for error function values as needed. At 450°C, the diffusion coefficient D= 6.3 × 10-17 m²/s.
Which of the following doped semiconductors will be p-type and which will be n-type (i)Arsenic in germanium (ii) Germanium in Silicon (ii) Indium in Germanium(iv) Silicon on antimony sites in Indium antimonide (InSb).(v) Magnesium on Gallium sites in gallium nitride(GaN).
The forward-bias voltage (V) required to maintain a PN diode current (I) is a function of the temperature (T). (a) Derive an expression for δV/δT (b) What is a typical value for a silicon diode? (c) Compare the result of (b) with a numerical value extracted.

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