Please correct answer and don't use hand raiting Briefly describe a model of a p-type semiconductor immersed in a 0.1 M H2SO4 acid solutionat equilibrium. (a) Identify the various layers in the semiconductor/solution interface, andthe expected potential difference across this interface. (b) Sketch and explain an ideal i/Ebehavior for a p-type semiconductor in the dark and under illumination.

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Answered: Briefly describe a model of a p-type…

Physical Chemistry

2nd Edition

ISBN:9781133958437

Author:Ball, David W. (david Warren), BAER, Tomas

Publisher:Ball, David W. (david Warren), BAER, Tomas

Chapter21: The Solid State: Crystals

Section: Chapter Questions

Problem 21.61E

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Most ceramic materials have low thermal conductivities because:(a) Electron mobility is strongly restricted due to their strong ionic-covalent bonding.(b) False, in general they are excellent thermal conductors (they are used in ovens).(c) Electron mobility is dependent on T and therefore they are poor conductors at high temperatures.(d) Electron mobility is very restricted by secondary bonds.
Most ceramic materials have low thermal conductivities because(a) Electron mobility is strongly restricted due to their strong ionic-covalent bonding.(b) False, in general they are excellent thermal conductors (they are used in ovens).(c) Electron mobility is dependent on T and therefore they are poor conductors at high temperatures.(d) Electron mobility is highly restricted by secondary bonds.
At room temperature (i.e., 300 K), a semiconductor made of gallium arsenide (GaAs) has an intrinsic electron concentration (ni) of 1.8×10^6 cm^-3 , an electron mobility (μe) of 8500 cm^2 V^1 s^-1 , and a hole mobility (μh) of 400 cm^2 V^-1 s^-1 . \ (a) Calculate the intrinsic electric conductivity and resistivity of GaAs at 300 K. (b) When GaAs is doped with an ionized donor concentration of 10^15 cm^-3 , where is the Fermi level? Calculate the electric conductivity of the doped GaAs. (c) If the semiconductor sample discussed in (b) is further doped with an ionized acceptor concentration of 9×10^14 cm^-3 , what is the free hole concentration and electric conductivity of the sample?
Manganese silicide has the empirical formula MnSi andmelts at 1280 °C. It is insoluble in water but does dissolvein aqueous HF. (a) What type of compound do you expectMnSi to be: metallic, molecular, covalent-network, orionic? (b) Write a likely balanced chemical equation for thereaction of MnSi with concentrated aqueous HF.
Resistivity measurements at 300 K show that an annealed metal single crystal has amonovacancy concentration CV = 10-9. When the same crystal is quenched from a hightemperature, the measurements indicate CV = 2x10-3. Calculate the temperature of thequench [Take Hf = 51.4 kJ/mol and R = 8.314 J/mol.K]. State any assumption involved. (5)(b) Explain why the esistivity of a metal is expected to be found more at room temperature after quenching. Hint: Use Matthiessen’s rule (find out by self-studying and cite thesource.)
(a) A hypothetical compound MB2 crystallises in the rutile lattice structure. (i) Draw the lattice structure of the unit cell MB2. (ii) Show by calculation that the stoichiometry of the formula is consistent with the structure. (iii) Determine the coordination number of the MB₂ unit cell.
Which of these statements is false?(a) As you go down column 4A in the periodic table, the elementalsolids become more electrically conducting. (b) Asyou go down column 4A in the periodic table, the band gapsof the elemental solids decrease. (c) The valence electroncount for a compound semiconductor averages out to fourper atom. (d) Band gap energies of semiconductors rangefrom ∼0.1 to 3.5 eV. (e) In general, the more polar the bondsare in compound semiconductors, the smaller the band gap.
Which of the following doped semiconductors will be p-type and which will be n-type (i)Arsenic in germanium (ii) Germanium in Silicon (ii) Indium in Germanium(iv) Silicon on antimony sites in Indium antimonide (InSb).(v) Magnesium on Gallium sites in gallium nitride(GaN).
The forward-bias voltage (V) required to maintain a PN diode current (I) is a function of the temperature (T). (a) Derive an expression for δV/δT (b) What is a typical value for a silicon diode? (c) Compare the result of (b) with a numerical value extracted.
In piezoelectricity and piezoelectric ceramics, one of the following options is false:(A). Piezoelectricity allows an electrical signal to be transformed into a mechanical one.(B). PbZrO3 is a well-known piezoelectric ceramic.(C). Piezoelectricity and ferroelectricity in general have no relationship.(D). One of the applications of piezoelectricity is sonar.
An ideal quantum dot for use in TVs does not contain anycadmium due to concerns about disposal. One potentialmaterial for this purpose is InP, which adopts the zinc blende (ZnS) structure (face-centered cubic). The unit celledge length is 5.869 Å. (a) If the quantum dot is shaped likea cube, how many of each type of atom are there in a cubiccrystal with an edge length of 3.00 nm? 5.00 nm? (b) Ifone of the nanoparticles in part (a) emits blue light and theother emits orange light, which color is emitted by the crystalwith the 3.00-nm edge length? With the 5.00-nm edgelength?
A particular form of cinnabar (HgS) adopts the zinc blendestructure. The length of the unit cell edge is 5.852 Å.(a) Calculate the density of HgS in this form. (b) The mineraltiemannite (HgSe) also forms a solid phase with the zincblende structure. The length of the unit cell edge in thismineral is 6.085 Å. What accounts for the larger unit celllength in tiemmanite? (c) Which of the two substances hasthe higher density? How do you account for the differencein densities?

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