Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
BJT Output Characteristics For the circuit in Figure 13, determine the AO0 voltage needed to bias the transistor to the edge of saturation (VCE = 0.3V). Rc = 1kQ, RB = 100kQ, ẞ = 150, Q1 = 2N3904, Assume VBE = 0.7V, VCE = 0.3V. If you look at the datasheet for the for DC current gain, hFE, the minimum is 100 and maximum is 300, so we will use ẞ=150. You can also see on the datasheet that the VBE is close to 0.7V which is why we are using 0.7V for the base-to-emitter forward bias voltage drop. +5V GND AO 0 Red (V) DMM RB. Ro Black(COM) 22 Q2 E Figure 13: NPN BJT Output Characteristics Circuit Hint: As explained in the background information, ẞ drops off dramatically as the BJT moves further into saturation. The threshold where this reduction of ẞ occurs is referred to as the edge of saturation and occurs around 0.3V but varies with different types of BJTs. Since it is the edge of saturation, we use the full ẞ value. Solve for IB first by writing a KVL from +5V through Vcë to ground (Keep in mind that VCE is equal to 0.3V for edge of saturation). Solve for Ic. Then solve for IB using ẞ. Once you have IB, you can solve for AO0 by writing another KVL from AO0 through Vв to ground and then solve for AO0.

BJT Output Characteristics For the circuit in Figure 13, determine the AO0 voltage needed to bias the transistor to the edge of saturation (VCE = 0.3V). Rc = 1kQ, RB = 100kQ, ẞ = 150, Q1 = 2N3904, Assume VBE = 0.7V, VCE = 0.3V. If you look at the datasheet for the for DC current gain, hFE, the minimum is 100 and maximum is 300, so we will use ẞ=150. You can also see on the datasheet that the VBE is close to 0.7V which is why we are using 0.7V for the base-to-emitter forward bias voltage drop. +5V GND AO 0 Red (V) DMM RB. Ro Black(COM) 22 Q2 E Figure 13: NPN BJT Output Characteristics Circuit Hint: As explained in the background information, ẞ drops off dramatically as the BJT moves further into saturation. The threshold where this reduction of ẞ occurs is referred to as the edge of saturation and occurs around 0.3V but varies with different types of BJTs. Since it is the edge of saturation, we use the full ẞ value. Solve for IB first by writing a KVL from +5V through Vcë to ground (Keep in mind that VCE is equal to 0.3V for edge of saturation). Solve for Ic. Then solve for IB using ẞ. Once you have IB, you can solve for AO0 by writing another KVL from AO0 through Vв to ground and then solve for AO0.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
See similar textbooks
icon
Related questions
Question

electrical engineering bjt

BJT Output Characteristics For the circuit in Figure 13, determine the AO0 voltage needed to bias the transistor to the edge of saturation (VCE = 0.3V). Rc = 1kQ, RB = 100kQ, ẞ = 150, Q1 = 2N3904, Assume VBE = 0.7V, VCE = 0.3V. If you look at the datasheet for the for DC current gain, hFE, the minimum is 100 and maximum is 300, so we will use ẞ=150. You can also see on the datasheet that the VBE is close to 0.7V which is why we are using 0.7V for the base-to-emitter forward bias voltage drop. +5V GND AO 0 Red (V) DMM RB. Ro Black(COM) 22 Q2 E Figure 13: NPN BJT Output Characteristics Circuit Hint: As explained in the background information, ẞ drops off dramatically as the BJT moves further into saturation. The threshold where this reduction of ẞ occurs is referred to as the edge of saturation and occurs around 0.3V but varies with different types of BJTs. Since it is the edge of saturation, we use the full ẞ value. Solve for IB first by writing a KVL from +5V through Vcë to ground (Keep in mind that VCE is equal to 0.3V for edge of saturation). Solve for Ic. Then solve for IB using ẞ. Once you have IB, you can solve for AO0 by writing another KVL from AO0 through Vв to ground and then solve for AO0.
Transcribed Image Text:BJT Output Characteristics For the circuit in Figure 13, determine the AO0 voltage needed to bias the transistor to the edge of saturation (VCE = 0.3V). Rc = 1kQ, RB = 100kQ, ẞ = 150, Q1 = 2N3904, Assume VBE = 0.7V, VCE = 0.3V. If you look at the datasheet for the for DC current gain, hFE, the minimum is 100 and maximum is 300, so we will use ẞ=150. You can also see on the datasheet that the VBE is close to 0.7V which is why we are using 0.7V for the base-to-emitter forward bias voltage drop. +5V GND AO 0 Red (V) DMM RB. Ro Black(COM) 22 Q2 E Figure 13: NPN BJT Output Characteristics Circuit Hint: As explained in the background information, ẞ drops off dramatically as the BJT moves further into saturation. The threshold where this reduction of ẞ occurs is referred to as the edge of saturation and occurs around 0.3V but varies with different types of BJTs. Since it is the edge of saturation, we use the full ẞ value. Solve for IB first by writing a KVL from +5V through Vcë to ground (Keep in mind that VCE is equal to 0.3V for edge of saturation). Solve for Ic. Then solve for IB using ẞ. Once you have IB, you can solve for AO0 by writing another KVL from AO0 through Vв to ground and then solve for AO0.
Expert Solution
steps

Step by step

Solved in 2 steps with 3 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,
SEE MORE TEXTBOOKS