at mid-band frequency.(b) For a MOSFET amplifier circuit shown in Figure Q.1, the transistor parameters are:VT = VGS(TH) = 1.5V, k = 0.5 mA/V, ra= 0,all junction and stray capacitances are neglected except C.The circuit is to be designed such that:The VGso = 2.79 VThe input impedance, Z= 155 kThe small signal voltage gain, A, =:- 10The lower -3dB frequency associated with C1, fLCI = 20 1laThe upper -3dB frequency associated with Cwo, ftoBy performing DC and ac analysis,(i) Drawv the ac equivalent circuit atUNTU(ii) Determine the value of the resistors R1 and R2.(iii) Determine the value of the transconductance, gm-(iv) Determine the value of the resistor Rp.IVERSITI TE(v)Calculate VpsQ.(vi) Determine the value of C, and Cwo.3SEEE/SKEE 1073 - FINAL EXAMINATIONVpp+ 9VRpRRig200 2K VpsQVsVoR2ZiFigure Q.1MMALAYSIATI TEKNOOGI MALAYSIA

Answered: Image /qna-images/answer/fab21434-58fb-498c-bbc4-6e5f9a172b61.jpg

(b) For a MOSFET amplifier circuit shown in Figure Q.1, the transistor parameters are: Vr = Vas(TH) = 1.5V, k = 0.5 mA/V², ra = co, all junction and stray capacitances are neglected except Cwo. The circuit is to be designed such that: • The Vaso = 2.79 V • The input impedance, Z,= 155 k2 • The small signal voltage gain, A, = • The lower -3dB frequency associated with C1, fici = 20 • The upper -3dB frequency associated with Cwo, fito - 10 By performing DC and ac analysis, (i) Draw the ac equivalent circuit at mid-band frequency. (ii) Determine the value of the resistors Rị and R2. IVERITI TEKMOaGI MALAYSIA (iii) Determine the value of the transconductance, gm. (iv) Determine the value of the resistor Rp. VERSITIT (v) Calculate Vpso. (vi) Determine the value of C1 and Cwo. ALA

(b) For a MOSFET amplifier circuit shown in Figure Q.1, the transistor parameters are: Vr = Vas(TH) = 1.5V, k = 0.5 mA/V², ra = co, all junction and stray capacitances are neglected except Cwo. The circuit is to be designed such that: • The Vaso = 2.79 V • The input impedance, Z,= 155 k2 • The small signal voltage gain, A, = • The lower -3dB frequency associated with C1, fici = 20 • The upper -3dB frequency associated with Cwo, fito - 10 By performing DC and ac analysis, (i) Draw the ac equivalent circuit at mid-band frequency. (ii) Determine the value of the resistors Rị and R2. IVERITI TEKMOaGI MALAYSIA (iii) Determine the value of the transconductance, gm. (iv) Determine the value of the resistor Rp. VERSITIT (v) Calculate Vpso. (vi) Determine the value of C1 and Cwo. ALA

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

d) Parasitic capacitances usually exist in a practical amplifier. Comment on the possible sources of the parasitic capacitances. How they are likely to affect the frequency response of the amplifier.
Problem No:2 For the network shown in Figure given below, 0.50 40 determine (a) the Norton equivalent circuit and (b) the Thevenin E, 15V equivalent circuit . [Ans: Isc=1.875A, Ry= RTH=2.4620, VTH=4.615V]
Elecronics Engineering
Figure 2 shows a typical BJT amplifier, with its parasitic capacitances displayed. The current gain of the transistor is B=150 and the voltage gain of the amplifier is Am =-125. The small signal resistances of the transistor are re =16 ohm and r0 = infinity, respectively. The values of resistors and capacitors in the figure are: R1 =80 kohm, R2 =20 Kohm, Rc = 2 Kohm, RE = 2 Kohm, Rs =50 W, RI=5 kohm, Cs=2 uF, Cc=2 uF, Ce =10 uF, Cbc =4 pF, Cbe = 10 pF, Cce =1 pF, Cwi = 4 pF, CWO = 9 pF, and Vcc = 20 V. a) Sketch a simplified circuit diagram of Figure 2 for high frequency analysis. b) Using the concept of "Miller effect capacitance", calculate the input and Output Miller effect capacitances of Figure 2, respectively. C) Determine the upper cut-off frequency of Figure 2 that is imposed by its input network only. d) Explain briefly the possible ways to increase the upper cut-off frequencv of this amplifier.
III An n-channel MOSFET ID versus VDS set of characteristics is shown below. A common-source resistively loaded amplifier uses this MOSFET. The resistive load RL = 1,000 ohms and the drain power supply (VDD) = 3 volts. (a) Draw the load line over the l-V characteristics shown immediately below.. (b) What is the slope of the resistive load line? VDD =3 volts 6 mA 5 mA -+ R. 4 mA + 3 mA -t 2 mA 1 mA 3 V 4 V 5 V Vps
I need the answer quickly
2. The parameters of the transistor as shown in the figure below are ß = 100 and VA = 100V. a. Find the dc voltages at the base and emitter terminals. b. Find Rc such that VCEQ = 3.5V. c. Assuming Cc and CE act as short circuits, determine the small-signal voltage gain Av = Vo/Vs. d. Repeat part (c) if a 5000 source resistor is in series with the vs signal source. V+ = +5 V Rs = 100 £2 www Us Cc RB = 10 ΚΩ I= Iausmi 0.35 mA www RC -000 V=-5 V CE
In the circuit given in the figure, Vcc= 12 V, Vin = 10 mV, B = 100, ro = 40 kn, RB = 360 kn, RC = 3.3 kn, RE = 220, Rs = 0.5 km and RL = 42.8 kn. Accordingly, find the voltage gain (Vout/Vin) of the circuit. NOTE-1: Output impedance of the transistor will be taken into account in ro calculations... NOTE-2: Capacitors are negligible at midband frequency. vin 220.07 Rs C1 RB -Vcc RC NPN RE C2 CE Vout RL D
Perform an ac analysis. Represent the amplifier by its ac equivalent circuit and discuss the input resistance at the base and the output resistance. (You can draw the circuit by hand on paper and can paste the image)
In an emitter-biased transistor circuit, we have collector source voltage V CC = 15 V, collector resistance RC = 3.5 kOhm, emitter voltage V_E = 4.3 V and emitter current LE = 2.1 mA. If the current gain is 150, what is the difference in emitter-collector voltage V_CE when we calculate it including the gain factor vs when it is calculated by assuming collector current LC = LE? Select one: O a. 3.35 V O b. 3.40 V OC 0.05 V O dov
please solve
35. The ac schematic of an NMOS common-source stage is shown in the figure below, where part of the biasing circuits has been omitted for simplicity. For the n- channel MOSFET M, the Transconductance 9m = 1mA/V, and body effect and channel length modulation effect are to be neglected. The lower cutoff frequency in Hz of the circuit is approximately at RD 10 ΚΩ V₁o M C 1uF R 10 ΚΩ