At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (Er) is 0.6 eV below the bottom of the conduction band (Ec), determine: a) the probability of occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b) the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26 meV.

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At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (EF) is 0.6
eV below the bottom of the conduction band (Ec), determine: a) the probability of
occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b)
the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26
meV.
Transcribed Image Text:At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (EF) is 0.6 eV below the bottom of the conduction band (Ec), determine: a) the probability of occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b) the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26 meV.
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