At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (Er) is 0.6 eV below the bottom of the conduction band (Ec), determine: a) the probability of occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b) the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26 meV.

At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (Er) is 0.6 eV below the bottom of the conduction band (Ec), determine: a) the probability of occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b) the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26 meV.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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At room temperature the band gap energy of Si is 1.12 eV. If the Fermi level (EF) is 0.6
eV below the bottom of the conduction band (Ec), determine: a) the probability of
occupancy for an electron to occupy a state E₁ that is at the middle of the band gap; b)
the probability of vacancy for a state E₂ that is 0.65 eV below Ec. At 300 K, KT = 26
meV.

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