7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.
7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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This is a subject called semiconductor devices. Need help to understand better.
![7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm 3. Find no and po. Draw the energy band
diagram indicating the position of the Fermi level.
%3D
8. InP is doped with Np = 2.0 x 1015 cm-3 and NA
and calculate the location of the Fermi level at room temperature.
1014 cm-3. Draw the energy band diagram
%3D](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F62cc2797-d17d-411a-be9b-0e88a9883772%2F7e22687e-d2d3-4f91-be45-5c9e9c2b1899%2Fwfo6dai_processed.jpeg&w=3840&q=75)
Transcribed Image Text:7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm 3. Find no and po. Draw the energy band
diagram indicating the position of the Fermi level.
%3D
8. InP is doped with Np = 2.0 x 1015 cm-3 and NA
and calculate the location of the Fermi level at room temperature.
1014 cm-3. Draw the energy band diagram
%3D
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