7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.
7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Transcribed Image Text:7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm 3. Find no and po. Draw the energy band
diagram indicating the position of the Fermi level.
%3D
8. InP is doped with Np = 2.0 x 1015 cm-3 and NA
and calculate the location of the Fermi level at room temperature.
1014 cm-3. Draw the energy band diagram
%3D
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