Assume that the gate oxide between an n+ poly-Si gate and the p-substrate is II A thick and Na = lEI8 cm3. (a) What is the VI of this device? (b) What is the subthreshold swing, S? (c) What is the maximwn leakage current if W = I µm. L = 18 nm? (Assume Ids = 100 W/L (nA) at Vg = Vt.)

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