Answered: Assignment-3) Calculate the extent of… | bartleby

Related questions

Question

Assignment-3) Calculate the extent of the depletion region and the peak electric field in an Al/n-Si
Schottky diode with Np = 1017 cm3 at a forward voltage of 0.5 V at 300 K.
%3D

Expert Solution

Step by step

Solved in 4 steps with 4 images

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

True or false? If false, correct the statement: a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA. b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers. c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance. d. In a Schottky contact, the energy barrier seen by electrons in the metal is always the Schottky barrier height, regardless of the applied bias across the metal and semiconductor. e. Usually the reverse current of a p-n junction diode is more sensitive to temperature as compared to that of a Schottky barrier diode. f. In a MOS structure with p-type semiconductor, if the semiconductor work function is much smaller than the metal work function, the MOS structure will produce an inversion layer after reaching the thermal equilibrium.…
Use Gauss's Law and basic surface and volume integrals to determine the electric field of a cylindrical semiconductor (radius=2 m, length = 1 m. permittivity or epsilon = 3 epsilon free space ) that has a net charge of 20C. What is the electric field at all points in space caused by this charge distribution? 1.Inside the semi conductor. 2.Outside the semi-conductor in the r direction. 3.Outside the semi conductor in the l direction. 4.Outside the semiconductor in the Theta direction. could you type answers out.
Question A7 Aluminium (Al) has a face-centered cubic structure, with lattice parameter a = 4.05 × 10-¹⁰ m. If each Al atom loses three electrons to make a free electron gas in the metal, what is the electron density ne?
1)A Si crystal in the form of a cube of side 1.0 nm is at equilibrium at 300 K.The edge of the conduction band is Ec = -1.0 eVa) What is the energy of a conduction electron in the ground state (in eV) ?b) What is the energy of the conduction electron in the first excited state (in eV)?
3 The Fermi-Dirac distribution provides the fraction of electrons that can be found for a given electron energy and temperature of the material. Silicon is a widely use semiconductor for computer processors and GPUs, with a band gap of 1.11 eV at room temperature (293 K). a) What is the Fermi energy of Silicon at room temperature? b) Calculate the electron concentration (total number of electrons) at 0.6 eV above the fermi level (in the conduction band) of one mol of silicon (each silicon atom contributes 4 electrons).
1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
3) For a Ge (not Si) p-n junction with Na = 1016cm-3 and Na = 1017cm-3, the peak electric field in the junction at breakdown is 2 × 105 V/cm. a) Determine the depletion zone width for this peak electric field. b) Calculate the reverse bias breakdown voltage of the diode. Hint: the built-in potential is needed to obtain an accurate result. c) What can be done to which doping level to approximately double the breakdown voltage? Explain.
Let's consider two vectors, A = (-7, 10), B = (-5, -8), and C = (-1, 6) as shown below. A C B What is the magnitude of A+ B+ C? Answer What is the direction (8) of A+B+C relative to +x-axis? a-839 b. 20 C-85 3 d. 148°
30
ON -3 e n DF n -M + CLJ F tane at Extrincic Semiconductor has Eg = 1 cv and holes a 2012 AT 01 X 8.) 14 3 18 300K = 10%/m² and electrons density at 300k = 10" /m³ determine fermi level at 300k and 500k K: boltzman's constant = 1.3 +10-22 jik