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ar of silicon in which a hole concentration profile described by p(x) = poe(-x/Lp) d. Find the hole-current density at x = 0. Let po = 1016 /cm³, D,= 12

ar of silicon in which a hole concentration profile described by p(x) = poe(-x/Lp) d. Find the hole-current density at x = 0. Let po = 1016 /cm³, D,= 12

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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Q2: (a) Consider a bar of silicon in which a hole concentration profile described by p(x) = poe(-x/Lp) is established. Find the hole-current density at x = 0. Let po = 1016 /cm³, Dp= 12x104 m?/sec, and Lp = 1um. If the cross-sectional area of the bar is 100 µm?, find the current Ip.
Transcribed Image Text:Q2: (a) Consider a bar of silicon in which a hole concentration profile described by p(x) = poe(-x/Lp) is established. Find the hole-current density at x = 0. Let po = 1016 /cm³, Dp= 12x104 m?/sec, and Lp = 1um. If the cross-sectional area of the bar is 100 µm?, find the current Ip.
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