a. Electromagnetic radiation of wavelengths ranging from 250 nm to 1100 nm fall on a cadmium telluride (CdTe) semiconductor of bandgap energy 1.44 ev. i. Determine the range of wavelengths (in nm) that when absorbed by the semiconductor will produce mobile electrons to act as charge carries. ii. Suggest possible semiconductors that could absorb the remaining range of wavelengths.
a. Electromagnetic radiation of wavelengths ranging from 250 nm to 1100 nm fall on a cadmium telluride (CdTe) semiconductor of bandgap energy 1.44 ev. i. Determine the range of wavelengths (in nm) that when absorbed by the semiconductor will produce mobile electrons to act as charge carries. ii. Suggest possible semiconductors that could absorb the remaining range of wavelengths.
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List of constants:
Planck's constant h = 6.63 x 10-34 J.s
Electron charge e = 1.60 × 10-19 C
Speed of light = 3.00 × 108 m/s
Question
a. Electromagnetic radiation of wavelengths ranging from 250 nm to 1100 nm fall on a
cadmium telluride (CdTe) semiconductor of bandgap energy 1.44 eV.
i. Determine the range of wavelengths (in nm) that when absorbed by the
semiconductor will produce mobile electrons to act as charge carries.
ii. Suggest possible semiconductors that could absorb the remaining range of
wavelengths.
b. A CdTe planar wafer has an absorption coefficient of 3.2 x 104 cm-1 for light of
wavelength 530 nm (Rangel-Cardenas and Sobral 2017; Figure 8). Determine the
minimum thickness the CdTe wafer has to be for 95% of this wavelength to be
absorbed.
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