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A Si semiconductor substrate was doped with Bismuth 2x10^17 cm^-3. Calculate step by step at room temperature: i) The concentration of majority and minority carriers in the Si substrate

A Si semiconductor substrate was doped with Bismuth 2x10^17 cm^-3. Calculate step by step at room temperature: i) The concentration of majority and minority carriers in the Si substrate

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mobility (cm²/Vs) 1400 1200 1000 800 600 400 200 0 1013 Carrier mobilities in Si at 300K 10¹4 holes electrons Não Nilo 1016 1015 Nd+Na total dopant concentration (cm³) 1017 1018 1019 1020
Transcribed Image Text:mobility (cm²/Vs) 1400 1200 1000 800 600 400 200 0 1013 Carrier mobilities in Si at 300K 10¹4 holes electrons Não Nilo 1016 1015 Nd+Na total dopant concentration (cm³) 1017 1018 1019 1020
A Si semiconductor substrate was doped with Bismuth 2x10^17 cm^-3. Calculate step by step at room temperature: i) The concentration of majority and minority carriers in the Si substrate ii) Using the curves in fig.1, determine its electrical resistivity iii) Calculate Ei at temperature 27°C; iv) Calculate A(EF - Ei);
Transcribed Image Text:A Si semiconductor substrate was doped with Bismuth 2x10^17 cm^-3. Calculate step by step at room temperature: i) The concentration of majority and minority carriers in the Si substrate ii) Using the curves in fig.1, determine its electrical resistivity iii) Calculate Ei at temperature 27°C; iv) Calculate A(EF - Ei);
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