A silicon sample of unknown doping has the dimensions of W=0.05 cm, A = Area of cross-section = 1.25 x 10-3 /cm2, current (I) = 2.0 mA. Applied magnetic field (B) = 2 x 10-4 Wb/cm2. If a Hall voltage of + 10mV is measured. Current direction and magnetic field directions are shown in Fig. 8, page 52.What is the conductivity type (p-type or n-type)? Calculate Majority carrier concentration Hall coefficient.Determine resistivity from the graph on page 51 (fig. 7) Hall mobility from the resistivity value. M Pravallika Documents XRecommendationsSP22: EE-257 Sec 01Ask a QuestionC Prep for a test - EE 21 XO HistoryO 2: Carrier Transport Ph X+learning.oreilly.com/library/view/semiconductor-devices-physics/9780470537947/09_chap02.html#chap02-sec005AUpdate :AppsG GmailYouTube9 МарsMapsSolved PROBLEMS...Homework 3 - web...O Problem 4: An intri...P5. The electron co...Four Point Probe Re...E Reading list1: Energy Bands and Carrier Concentration in Therm...2: Carrier Transport PhenomenaPART II: SEMICONDUCTOR DEVICES17h 31m remainingwhere(20)qpWArea AVFig. 8 Basic setup to measure carrier concentration using the Hall effect.E.The Hall field Cy is proportional to the product of the current density and theI HW04_soll.pdf.pdf* HW02_sol.pdf (1).pdf* HW02_sol.pdf.pdfI IELTS (2).pdfPOFShow all12:13 AMType here to searchw』人22°C22-Feb-22!!!II---DI M Pravallika Documents XRecommendationsSP22: EE-257 Sec 01Ask a QuestionC Prep for a test - EE 21 XO HistoryO 2: Carrier Transport Ph X+learning.oreilly.com/library/view/semiconductor-devices-physics/9780470537947/09_chap02.html#fig8AppsG Gmail9 МарsYouTubeMapsSolved PROBLEMS...Homework 3 - web...O Problem 4: An intri...AUpdate :P5. The electron co...Four Point Probe Re...1: Energy Bands and Carrier Concentration in Therm...E Reading list2: Carrier Transport PhenomenaPART II: SEMICONDUCTOR DEVICES17h 31m remainingFig. 6 Measurement of resistivity using a four-point probe.104300K103SiGaAs102p-GaAs10!p-Sin-GaAs10-n-Si10-210-3104101210131014101510161017101810191020 1021Impurity Concentration (cm)Fig. 7 Resistivity versus impurity concentration³ for Si and GaAs.POFI HW04_soll.pdf.pdf* HW02_sol.pdf (1).pdfPDF* HW02_sol.pdf.pdfI IELTS (2).pdfShow allType here to search12:14 AM22°C22-Feb-22!!! o1.---IIResistivity (2- cm)

It is given that: W=0.05 cmA=1.25×10-3 cm-2I=2 mAB=2×10-4 Wbcm2H=10 mV

Answered: A silicon sample of unknown doping has…

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A silicon sample of unknown doping has the dimensions of W=0.05 cm, A = Area of cross-section = 1.25 x 10^-3 /cm², current (I) = 2.0 mA. Applied magnetic field (B) = 2 x 10^-4 Wb/cm². If a Hall voltage of + 10mV is measured. Current direction and magnetic field directions are shown in Fig. 8, page 52.What is the conductivity type (p-type or n-type)? Calculate Majority carrier concentration Hall coefficient.Determine resistivity from the graph on page 51 (fig. 7) Hall mobility from the resistivity value.

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It is given that:

$W = 0.05 cm A = 1.25 \times 10^{- 3} {cm}^{- 2} I = 2 mA B = 2 \times 10^{- 4} \frac{Wb}{{cm}^{2}} H = 10 mV$

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