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A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10 cm/sec.

A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10 cm/sec.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A Silicon bar having a length of 4μm, doped with n-type at 107/cm³, calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10' cm/sec.
Transcribed Image Text:A Silicon bar having a length of 4μm, doped with n-type at 107/cm³, calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10' cm/sec.
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