A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10 cm/sec.

A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is now raised at 100V, what will be the change in current? Electron and hole mobilities are 1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the velocity for electron is V₂ = 10 cm/sec.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

A Silicon bar having a length of 4μm, doped with n-type at 107/cm³, calculate the current
density for an applied voltage of 2V having a cross sectional area of 0.01cm². If the voltage is
now raised at 100V, what will be the change in current? Electron and hole mobilities are
1350 cm²/V-sec and 400 cm²/V-sec for low electric field. For higher field saturation, the
velocity for electron is V₂ = 10' cm/sec.

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