A silicon (100) wafer with an initial oxide thickness of do is oxidized in a furnace at 1100 Cwith oxygen gas flowing in at a flow rate of 1.5 pm. After 2 hours, the oxide thickness wasmeasured to be around 175 nm. Calculate the original field oxide thickness do?

First to determine a wet oxidation at 1100oC (That is, 1373 K).

Answered: A silicon (100) wafer with an initial…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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A silicon (100) wafer with an initial oxide thickness of do is oxidized in a furnace at 1100 C with oxygen gas flowing in at a flow rate of 1.5 pm. After 2 hours, the oxide thickness was measured to be around 175 nm. Calculate the original field oxide thickness do?