Facebook .l12:39 AMO 54%DoneEditFalseA Si photo-detector has a length of L= 10 pum and a hole lifetime of t1x 10 s. Ifa voltage of 5 V is applied across thedetector length, the detector gain "G" at the applied voltage will be:Select one:OA. Gph = 2.925O B. Gph = 25.000OC. Gph = 4.000• D. Gph = 10.000OE. Gph = 1.250More

Given data: Length of photo detector L=10 μm Hole lifetime ςp=1×10-9s Voltage V=5 v

A Si photo-detector has a length of L=10 um and a hole lifetime of detector length, the detector gain "G" at the applied voltage will be: Select one: OA Gph = 2.925 O B. Gph = 25.000 OC. Gph = 4.000 •D. Gph = 10.000 OE. Gph = 1.250

A Si photo-detector has a length of L=10 um and a hole lifetime of detector length, the detector gain "G" at the applied voltage will be: Select one: OA Gph = 2.925 O B. Gph = 25.000 OC. Gph = 4.000 •D. Gph = 10.000 OE. Gph = 1.250

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A Si photo-detector has a length of L= 10 pum and a hole lifetime of t1x 10 s. Ifa voltage of 5 V is applied across the
detector length, the detector gain "G" at the applied voltage will be:
Select one:
OA. Gph = 2.925
O B. Gph = 25.000
OC. Gph = 4.000
• D. Gph = 10.000
OE. Gph = 1.250
More

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