(a) Given that the energy needed to assemble a uniformly charged sphere of radius R and charge Q is U = 3k Qʻ/5R,where k, is the Coulomb constant, determine the energy (in MeV) needed to overcome the Coulomb repulsion of 12%3Deprotons uniformly distributed throughout a sphere the size of a Mg-24 nucleus.MeV(b) Determine the binding energy for a Mg-24 nucleus (in MeV). (Let the mass of a proton be 1.0078 u, the mass of aneutron be 1.0087 u, and the mass of Mg-24 be 23.9850 u.)MeV(c) Which of the following is the correct conclusion from the results of parts (a) and (b)?electrostatic forces are much greater than nuclear forcesnuclear and electrostatic forces are about the same strengthnuclear forces are slightly greater than electrostatic forcesnuclear forces are much greater than electrostatic forceselectrostatic forces are slightly greater than nuclear forces

Since,we answer only one question at a time.So,providing you the solution of first question…

(a) Given that the energy needed to assemble a uniformly charged sphere of radius R and charge Q is U = where k, is the Coulomb constant, determine the energy (in MeV) needed to overcome the Coulomb repulsion of 12 3k,Q²/5R, protons uniformly distributed throughout a sphere the size of a Mg-24 nucleus.

(a) Given that the energy needed to assemble a uniformly charged sphere of radius R and charge Q is U = where k, is the Coulomb constant, determine the energy (in MeV) needed to overcome the Coulomb repulsion of 12 3k,Q²/5R, protons uniformly distributed throughout a sphere the size of a Mg-24 nucleus.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Q: Estimate the resistivity of a Si sample doped with phosphorus to a concentration of 10 ^ 15 * c * m…

A: When Silicon is doped with phosphorus the majority of the charge carrier are electrons which means…

Q: 30μc In the region J = 10 r-² ār A/m², py m3 a) Find I b) Find the velocity and explain its…

A: Solution - Given,J→ = 10r-2a¯r A/m2ρv = 30μCm3

Q: Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is…

Q: 5. At a corner of a 30 mm x 40 mm rectangle is placed a charge of -40µC and at the two adjacent…

A: The given figure is shown below:

Q: The plot provides the profile of minority charge carriers in the p-region of a semiconductor device.…

A: "According to the Company's policy we will provide solution of the first three sub-parts of the…

Q: Q6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added…

Q: The drift velocity of electrons under an external electric field of 10 V/m is 25 m/s. Estimate the…

A: Given, Drift velocity of electron vd=25 m/s Applied electric field E=10 V/m

Q: Question 1 In any electrically conductive substance, what are charge carriers? Identify the charge…

Q: Distance (x) Distance (x) where appropriate. After a period of time the concentration profiles of…

A: Given- Electron and hole concentration with respect to distance is given- Also, To Find- The…

Q: the magnitude of the force between a 10 mC charge at ( 2, 4, -1) and a 15 mC charge which lies on…

A: We need to find out location of charge particle for given force .

Q: A conductor material has a free-electron density of 1025 electrons per m³, When a voltage is…

A: Given a conductor material has, Free electron density, n=105 electrons per m3 Drift velocity,…

Q: Two identical point charges are located at (1,-1,4), and (1,2,-3) respectively. The force on the…

Q: A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K…

A: The boron concentration in Si wafer is: (1). At temperature T = 0 K, the Si wafer acts as an…

Q: located 3.5m away from a fixed, stationary charge of value +250C. Determine the change in potential…

Q: A silver wire 60 mm in diameter transfers a charge of 36-C in 40 minutes. Silver contains 5.8x1028…

Q: Question 2 What incremental energy (in picojoules) is needed to move a 1 – µC charge an incremental…

A: Energy is capacity to doing a work . Energy are store in different form , kinetic energy , thermal…

Q: Ex1:- For the point charge Q 30 µc at (0,0,0) find the potential difference between b (8,6,7) to a…

A: The solution can be achieved as follows.

Q: 1 List the logic gates names that have been used in the given combinational logic circuit. 2. Write…

A: Introduction: There are different kinds of logic gates like AND, OR, NOT, EX-OR, EX-NOR, NAND, and…

Q: Q/A current of 0.5 A flow through germanium strip with length of 4 mm and rectangular cross-section…

A: The given problem is from semiconductor physics. The detailed solution is given in the next step

Q: 50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage…

Q: a) If the electron concentration increase along the x-axis of a conductor as shown in equation…

Q: Copper wire 10 m long has a cross-section area (0.5 mm²) and resistivity (0.34 micron). Calculate…

Q: 1.2. A capacitor consists of two circular plates of radius r separated by distance d. The plates are…

A: Area of capacitor plate, A=πr2A) Energy stored inside the capacitor, E=12CV2→equation 1Where,…

Q: is C 1.1 A specimen of intrinsic germanium with the 1.5 In density of charge carriers of 2.5 x…

A: This problem is from basic of electronics .

Q: 1.1 A specimen of intrinsic germanium with the density of charge carriers of 2.5 x 1013/cm³, is…

A: Given, A specimen of intrinsic germanium with, The density of charge carrier, ni=pi=2.5×1013cm3 The…

Q: (4q ) and (3q) and (2q) and ( q) put four point charges 2a at the vertices of a square of length…

A: Given, (4q ) and (3q) and (2q) and ( q) put four point charges 2a at the vertices of a square…

Q: The drift velocity of electrons under an external electric field of 10 V/m is 25 m/s. Estimate the…

A: Charge carriers inside semiconductors drift under the application of the external electric field…

Q: -6 µC A)

Q: Can you label which one is part A and Part B because I don't know how to do Part A and Part B thank…

Q: 1. Pure germanium has (4 x 1022) atom. cm-3 doped by indium atoms, the impurity is add to the extent…

Q: The charge of a nucleus of Helium is equal to +3.2x10-19 C, and it is held in place. What is the…

A: First we will solve for electric potential ,Coulomb force and Potential Energy of the electron.

Q: A Si cylindrical specimen was 5.1mm in diameter and 51 mm in length, a current has flowed in the…

A: Given: The diameter is 5.1 mm The length is 51 mm The current is 0.1 A The voltage is 12.5 V The…

Concept explainers

Electric field

A physical field present around an electrically charged particle that exerts a force on all other charged particles is called an electric field. The charged particles present in the field either repel or attract. From electric charges or time-varying magnetic fields, the electric field originates. One of the manifestations of electromagnetic force which is one of the four fundamental forces present in nature are the electric fields and magnetic fields.

Question

(a) Given that the energy needed to assemble a uniformly charged sphere of radius R and charge Q is U = 3k Qʻ/5R,
where k, is the Coulomb constant, determine the energy (in MeV) needed to overcome the Coulomb repulsion of 12
%3D
e
protons uniformly distributed throughout a sphere the size of a Mg-24 nucleus.
MeV
(b) Determine the binding energy for a Mg-24 nucleus (in MeV). (Let the mass of a proton be 1.0078 u, the mass of a
neutron be 1.0087 u, and the mass of Mg-24 be 23.9850 u.)
MeV
(c) Which of the following is the correct conclusion from the results of parts (a) and (b)?
electrostatic forces are much greater than nuclear forces
nuclear and electrostatic forces are about the same strength
nuclear forces are slightly greater than electrostatic forces
nuclear forces are much greater than electrostatic forces
electrostatic forces are slightly greater than nuclear forces

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 3 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

Given that a single point-like charge of -40 μC is fixed at the origin, calculate the work required to move a second 60 μC charge from r = 14 cm to r = 28 cm. Hint: pay attention to the signs. The work, W = Units .
Field current If can be varied by varying the resistance of field resistance which is connected in parallel with the field circuit. Select one: O True ion False has medium
Can you find, use, and analyze the drift velocity of electrons in a wire? Calculate the drift velocity of electrons if a current of 5 A flows through a 12-gauge copper wire. A 12-gauge wire has a radius of 1 mm and the number density of copper is 8 x 1028 atoms/m3. Number m/s
4 - A sphere coated with conductive paint is loaded with a charge of -0.8 nC and then touched to an identical uncharged sphere. The spheres are then separated from each other. Find the charge and the number of electrons (by a factor of x10 ^ 9) in the last case.A) 0.8 nC and 1.53 electronsB) -0.4 nC and 1.53 electronsC) 0.4 nC and 2.49 electronsD) -0.8 nC and 1.53 electronsE) -0.4 nC and 2.49 electrons
QUESTION 3 The electric field distribution in the "depleted region" of a semiconductor diode made from a material with a relative dielectric permittivity of 20 is given by the formulas Ex-1×10¹2x, Ey-2x1012y, E₂-0 where the electric field is in V/m and X and y are Cartesian coordinates in metres. Calculate and enter the charge density in this part of the device, in C/m³ to 3 significant figures. Your result should not depend on X,Y, and Z.
ii. Mark clearly the correct directions of electron and hole flow directions and currents in the presence of an electric field and concentration gradients as shown below. Hole Flow (Diffusion) Hole Flow (Drift) Hole Current (Diffusion) Hole Current (Drift) Electron Flow (Diffusion) Electron Flow (Drift) Electron Current (Diffusion) Electron Current (Drift) E(x) n(x) p(x)
01/ 1- Determine the energy expended in moving a charge of (80uC) through a potential difference of (10V)? 2- For a (1 k2) copper resistor with a temperature coefficient at (20°C) 0.00393, determine the resistance at (60°C)? 3- For a copper wire having a diameter of (1.3 mm). Determine the resistance of (75 meters) of a solid copper wire having the above diameter? Determine the Conductance (G) for this resistance ? 4- Prove that W = S P.dt ? %3D
Find the electric field @ point P in inside a uniform spheric volume charge P(r,0,6) Pv
I need the answer quickly
uestionl: A charge of ¢ =+1.20 pC is placed in a uniform x- directed electric field of magnitude Ex = 1.40 x 103 N C —1. How much work must be performed in order to move the charge a distance ¢ = —3.50 cm in the x-direction? What is the potential difference between the initial and final positions of the charge? If the electric field is produced by two oppositely charged parallel plates separated by a distance d = 5.00 cm, what is the potential difference between the plates?