Distance (x) Distance (x) where appropriate. After a period of time the concentration profiles of excess electrons and holes changes as pictured below. E-Field ut Electron Concentration (n) Distance (x) Hole Concentration (p) Which of the following describes the dominant process occurring? O only diffusion occurs O only drift occurs O only recombination occurs O only generation occurs E-Field time Distance (x)
Distance (x) Distance (x) where appropriate. After a period of time the concentration profiles of excess electrons and holes changes as pictured below. E-Field ut Electron Concentration (n) Distance (x) Hole Concentration (p) Which of the following describes the dominant process occurring? O only diffusion occurs O only drift occurs O only recombination occurs O only generation occurs E-Field time Distance (x)
Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Transcribed Image Text:Distance (x)
Distance (x)
where appropriate. After a period of time the concentration profiles of excess electrons and holes changes as pictured below.
Electron Concentration (n)
E-Field
Distance (x)
Hole Concentration (p)
Which of the following describes the dominant process occurring?
O only diffusion occurs
O only drift occurs
O only recombination occurs
O only generation occurs
E-Field
time
Distance (x)
Transcribed Image Text:At a time t=0 the profile of free carriers in an intrinsic semiconducting material at a distance, x is illustrated:
Electron concentration (n)
E-field
Hole concentration (p)
E-field
The indicated electric field applies both to the electrons and holes
Distance (x)
Distance (x)
where appropriate. After a period of time the concentration profiles of excess electrons and holes changes as pictured below.
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