Answered: The plot provides the profile of…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Transcribed Image Text:10 mpo The plot provides the profile of minority charge carriers in the p-region of a semiconductor device. The 10°ngo term represents the excess carriers that are produced in the p-region as the result of some injection process (connection to a power supply, a source of light, etc.). Assume the following properties: a = 9.4 Np = 9.75 x 1016 cm-3 nị = 1.5 × 1010 cm-3 qe = -1.6 x 10-19 C qn = 1.6 x 10-19 CA = 2.2 µm² W = 4.88 x 10-8 nm D, = 10.1 cm²/s Dp = 20.1 cm? /s where Np is the donor concentration, NA is the acceptor concentration, n; is the intrinsic carrier concentration, A is the junction area, W is the width of the region of interest, D, is the diffusivity of electrons, Dp is the diffusivity of holes, qe is the charge of an electron, and qħ is the charge of a hole. Assume ny is 1.5z1010cm-3. Determine the following: a.) the concentration of minority carrier electrons at equilibrium (n40). b.) the excess concentration of minority carriers after injection. c.) the spatial derivative of carrier concentration wrt to distance d.) the current density in the region e.) the current flowing through the region with the given junction area • NOTE: Enter numerical values only!. If not specified assume "base" units (V,A, Hz, etc.). • Graded as: Correct answers are within 5% of solutions

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