(a) A free proton is localized within Ax = 10-¹0m. Estimate the time t, it takes the packet to spread appreciably. Repeat for an proton localized within 1 cm.

Q: In a semiconductor it is observed that 0.8 of the current is carried by electrons and 0.2 by holes.…

A: The given data are: Ie=0.8Ih=0.2ve=2.5vh

Q: In a common emitter configuration, base current of 0.9 milliamperes and emitter current of 5.48…

A: For transistor, IE = IB + IC Here, IE = emittor current, = 5.48 mA IB = base current, = 0.9 mA Ic =…

Q: A resistance of 20 2 is connected in the left gap of a meter brige and an unknown resistance X is…

A: This is a problem based of meter bridge : The resistance in the left gap, R=20 ohm unknown…

Q: A 1000 pF capacitor is connected in series with a 2000 pF capacitor. Initially, the charges onthe…

A: The objective of this question is to understand the behavior of capacitors in a series circuit and…

Q: A bar of copper of (2cm) length and resistively of (1.8× 10-Nm) is connected to power supply of…

A: Given, Length of the copper bar (L) = 2 cm = 2×10-2 m. Resistivity of copper ρ=1.8×10-8 Ωm. The…

Q: Calculate the conduction velocity if the electrodes are 12cm and there are 0.3sec between the time…

A: To calculate the conduction velocity, we need to use the following formula: Conduction Velocity =…

Q: According to Moore's Law, if a transistor is 183.8 microns wide this year, how many microns wide…

A: According to Moore's lawNumber of microns=Microns per transistor in current year2Upcoming count of…

Q: 10- A certain logic gate has a VoLmax) = 0.45 V, and it is driving a gate with a VIL(max) = 0.75 V.…

A: VIL(max);0.45⪇0.75;0.45⪇0.75;This is the nessesary condition for gate driven processes;

Q: TA wire A wire B se/2 Assume thot same voltage is applied Current density accras these for wines…

A:

Q: Volume charge density within the operating region of a parallel-plate vacuum diode is given by p =…

A: Given data: The volume charge density is ρ=-49ε0V0d-4/3x-2/3. The values of constant are, V0=40 Vd=1…

Q: If three cells of 1V, 1.5V, 2V are connected in parallel, then the total e.m.f will be:

A: it is to be noted that there is no definite, straight and simple formula for total emf of cells that…

Q: Drive the relation berween current gain factor β and ϒ.

A: In the given question we derive the relation between current gain factor beeta and gamma.

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A:

Q: Explain why the practical yalue is less than the Q6): If the network is properly connected in lab,…

A: In this case practically the voltage gain is observed as Av=100 Theoretically it has been calculated…

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A:

Q: (b) A rod of Ge (Germanium) crystal weighing 350 g contains 30 mg of P (phosphorus). (i) What is the…

A: Given: The mass of rod is m=350 g. The mass of phosphorus is m'=30 mg. The additional doping is…

Q: For agiven thermopile with having8 series connected typer thermocouples If the cold junction…

A: Answer..

Q: A long of radios a Copper wire free Sunfae chare wth is Slipped insiide plasric tube af inna The…

A:

Q: Q4:- The electron concentration in a Si sample is given by n(x) = n(0) exp (-); x >0 With n(0)= 1017…

A:

Q: If the acceleration voltage is 150 kV, calculate the half-life thickness knowing that the 10%…

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Q: Consider a gallium arsenide sample at 7= 300 K with doping concentrations of Na=0 and N₁- 10¹6 cm³³.…

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Q: Calculate the volume of an FCC unit cell in terms of the atomic radius, R.

A: As we know that in FCC unit cell 8 atoms is situated at the 8 corners of FCC unit cell and 6 atoms…

Q: Hall effect data in an actual student laboratory was as follows: for a doped indium arsenide strip…

A: Given: The current is 100 mA=0.1 A The thickness is 0.15 mm=0.15*10-3 m The voltage is 11.5…

Q: The probability current density to the wave function (x, t) = 2 e-14kx where k is a constant is: %3D

A:

Q: By using spherical electrodes with the diameter D=50cm, the following breakdown voltages are…

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Q: The GaAs sample at T= 300 K with doping concentrations of [Na=0 and Na- 10¹6 cm-³]. Assume complete…

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Q: (5) Knowing that the resistivity p of lithium is of the order 10-5 Q-cm at ambient temperature, find…

A: Given data, Resistivity of lithium = 105 Ω.cm Free electron density of lithium = 4.5x1028…

Q: A Si sample with 10¹5 cm³ donors is uniformly optically excited at room temperature in such a way…

A: Given:- Donor concentration (Nd): 1015 cm-3- EHP generation rate (G): 1019 cm-3 per second- Electron…

Q: diamagnetic expt Find Current density for and nis ne sneexp(e) as function of r the Cas e when. n…

A: Given: The number of electron and hole is given as ni = ne=n0 exp eϕkT n(r) = n0 exp -r2r02

Q: In a parallel-plate diode, the anode is at 100 V with respect to the cathode which is 10 mm away…

A: Calculate the electric field intensity in between the plates :E=Vd  =100 V10 x 10-3m  =104 V/m

Q: ltage across an elementvary with time as shown in the figure. Sketch the power delivered to the…

A: We have that the current through and the voltage across an elementary with time as shown in the…

Q: The relaxation time of mi c (0- 10-15 mholm, %3D Er=8-2) is

A: Given: σ=10-15 mho/m εr=8.2 The relaxation time of mica =?

Q: V(x) = { 0<x<a خارج الحاجز 0<x<a Outside the barrier

A: Given: The particle of mass m moving in the potential barrier is given below.…

Q: By using spherical electrodes with the diameter D=50cm, the following breakdown voltages are…

A: Given : D=50 cm a=7.4 cm=0.074 m t=200 C P∘=760 mmHg

Q: A silicon-based MOSFET has a square gate 0.50 mm on edge. The insulating silicon oxide layer that…

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Q: a) What is the charge of an oil droplet if the droplet has a mass of 2 μg and is at rest in a…

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Q: A planar optical waveguide of length = 5 cm is fabricated in an epitaxial layer of GaAs that has an…

A: a) The power loss due to free-carrier absorption in a waveguide can be calculated using the…