9. A silicon device is maintained at 300 °K is characterized by the following band diagram. Ec EF E Ev 0.25Eg L/4 3KT L/3 Electron L/2 2L/3 3L/4 L 0.25Eg Hole A) Do equilibrium conditions prevail? How can you tell? B) Where is the semiconductor n-type in the range from 0
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- 4. What will be the majority and minority carrier concentrations in a P-Type Semiconductor, if the intrinsic concentration at 300 K is 1.45 x 1010/ cm³, and the dopant acceptor atom concentration is 1015/ cm³?A silicon diode is operated in an environment whose temperature is ten times its ambient temperature. Its forward breakover voltage will a. not change at all b. be slightly greater than 0.7 V c. be less than 0.7 V d. be greater by ten times3. Determine the following values based on the figure shown below of an NPN Si BJT, where NE 5×10¹8, NB= 10¹7, and Nc= 2×10¹6 cm³. Assuming the transistor is operated in the active mode with VBE=0.83 V. (a) Determine np(0) and pn(0). (b) If the effective base width W is 80 Å, D₂= 25 cm²/s, and the intrinsic emitter area is 0.5 mm², determine the total collector current. (c) If the current gain ß= 150, determine the base and emitter current. Carrier concentration Pao Emitter (n) Hole concentration EBJ depletion. region Pr (0) (0) 11 Base (p) Electron concentration np (ideal) n (with recombination) Effective base width W CBJ depletion region Collector (n) Distance (x)
- Which of the following lattice structure is the? reciprocal Lattice of FCC lattice FCC .a O BCC .b O HCP .C O SC .d O5. A transistor is biased with feedback resistor Rg of 100k2. If Vcc= 25V, Rc= 1k2 and B= 200. Find the values of zero signal Ic and Vce ? 6. Find the Q-point values in the circuit. Also find the minimum power rating of the transistor -12 V 33 k2 1.8 k2 B= 50 5.6 k2 560 2Explain how a metal-oxide semiconductor field-effect transistor (MOSFET) acts as a transistor. Explain how it functions as a transistor by describing its parts and how they work.
- 3. If a semiconductor is transparent to light with a wavelength longer than 800 nm, what is its approximate bandgap energy in eV? Side note: Please make sure you understand the energy unit, eV. Convert 1 eV into Joules. Convert 10-19 J into eV.2. Consider a metal-semiconductor contact between tungsten (W) and n-type silicon doped to No = 10¹6 cm3 at T = 300 K. The work function of W is 4.6 eV and the electron affinity of silicon is 4.01 eV. Determine (a) the Schottky barrier height (b) the built-in potential barrier (c) the maximum electric field.2. A silicon p-n step junction diode is doped with No = 10¹6 cm-³ and No = 4 x 1018 cm-³ on the n side and p side, respectively. Calculate the build-in potential, space charge width, and maximum field at zero bias at room temperature.
- 1. Is a N-type or P-type semiconductor electrically neutral? Why or why not?how does a semiconductor behaves at 0K? Explain your answer.1. With rise in temperature the electrical conductivity of intrinsic semiconductor: a. Increase b. decrease c. Increase and then decrease d. decrease and then Increase 2. In a semiconductor a. There are no free electrons at any temperature b. There are no free electrons at 0K c. Number of free electrons more than that d. None of the above 3.Which of the following characteristics of electrons determines the current in a conductor? (a) Drift velocity alone. (b) Thermal velocity alone. (c) Both drift velocity and thermal velocity. (d) Neither drift nor thermal velocity. 4.If the electric current in a coil is doubled the magnetic flux density a) halves b) remains unchanged c) doubles d) quadruples