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9. A silicon device is maintained at 300 °K is characterized by the following band diagram. Ec EF E Ev 0.25Eg L/4 3KT L/3 Electron L/2 2L/3 3L/4 L 0.25Eg Hole A) Do equilibrium conditions prevail? How can you tell? B) Where is the semiconductor n-type in the range from 0

9. A silicon device is maintained at 300 °K is characterized by the following band diagram. Ec EF E Ev 0.25Eg L/4 3KT L/3 Electron L/2 2L/3 3L/4 L 0.25Eg Hole A) Do equilibrium conditions prevail? How can you tell? B) Where is the semiconductor n-type in the range from 0

Question
9. A silicon device is maintained at 300 °K is characterized by the following band diagram. Ec EF E₁ Ev 0 0.25Eg L/4 3KT L/3 Electron L/2 2L/3 3L/4 L 0.25Eg Hole A) Do equilibrium conditions prevail? How can you tell? B) Where is the semiconductor n-type in the range from 0<x<L? C) Where is the semiconductor p-type in the range from 0<x<L? D) Is the semiconductor degenerate at any point from 0<x<L? If so, where? E) What is the kinetic energy of the hole shown on the diagram? F) What is the potential energy with respect to the Fermi level of the hole shown on the diagram?
Transcribed Image Text:9. A silicon device is maintained at 300 °K is characterized by the following band diagram. Ec EF E₁ Ev 0 0.25Eg L/4 3KT L/3 Electron L/2 2L/3 3L/4 L 0.25Eg Hole A) Do equilibrium conditions prevail? How can you tell? B) Where is the semiconductor n-type in the range from 0<x<L? C) Where is the semiconductor p-type in the range from 0<x<L? D) Is the semiconductor degenerate at any point from 0<x<L? If so, where? E) What is the kinetic energy of the hole shown on the diagram? F) What is the potential energy with respect to the Fermi level of the hole shown on the diagram?
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