8. At om Jemperatuse 300k ,pn junchionisus in eqů l86xium. hor which do pingconcentrtion NA= 10%Cm, Na = 10T10/082.asea A= 10t em%3Dhavingcros8s lectiondfind width of deple tion layer

The conductivity of semiconductor is lies in between conductor and insulator. The conduction in…

Answered: 8. A4 om temperature is in equil96xium.…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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We have a junction diode that has iD = 0.2 mA for vD = 0.6 V. Assume that n = 2 and VT = 0.026 V. Use the Shockley equation to compute the diode current at vD = 0.65 V and at vD = 0.70 V.
In a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?
For an ideal silicon p-n abrupt junction with NA = 1017 cm-3 and ND = 1015 cm-3(a)calculate Vbi at 250, 300, 350, 400, 450 and 500 K and plot Vbi versus T. (b) comment on your result in terms of energy band diagram. (c) find the depletion layer width and the maximum field at zero bias for T = 300 K
Draw the characterstic r-l for silicon diode in the forward bais and explain it.
At 20 C a pn junction silicon diode has a current-voltage relation of I = 101+le*0v _ 1). What is the diode voltage when the current is 50 mA? %3D
in a compound semiconductor intrinsic level is found to be 0.0003ev below the mid gap at 300l what is the ratio of the electron effective mass to the hole mass
Find the range of Ix to meet thefollowing conditions of the diode D1 and D2(Assume Von = 0.7V for both diodes).
Calculate the built-in potential barrier in a pn junction. Consider a silicon pn junction at T = 300 with doping concentrations of Na = 2x10¹7 cm¯³ and Nd=1015 cm 3.
A 1N4738A zener diode has a ZZ of 4.5 Ω. Taking the data from the datasheet we have VZ = 8.2 V with a test current, IZ, of 31 mA. What is the voltage across the zener terminals when the current is 15 mA? When the current is 55 mA? Make the representation of the values by means of their curve characteristic.
3) Draw V-I Charters tics of p-n Junction and explain forward bias & Reverse Bias
The Zener diode shown below, is specified to have Vz-20V at Izr, IzK = 0.1 mA, IzT =17 mA, and r, = 14 2. Voc = 30V. 1) Replace the Zener diode with its Model. 2) Find the current I with no Load. 3) Find Vo with no Load when VCC = 30V. 4) Find R1 Min. r30V 2000 Vz = 20V %3D 68-V zener
Consider an n-type silicon for which the dopant concentration is ND = 1016 cm-3. Find: a) The electron and hole concentration at T = 300K b) Repeat for T = 500K

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8. A4 om temperature is in equil96xium. ho ohich doping Eoncentrution NA = 10%cm, N having find width of deple lion layer 300k, pn junction =10/0T %3D cross ectond asea A= 10-t em?