Redraw figure for p channel case
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Redraw figure for p channel case
![277
Field Effect Transistors
Figure 6-12
Band diagram for
the ideal MOS
(V = 0)
structure at:
(a) equilibrium;
(b) negative
voltage causes
hole accumulation
in the p-type
semiconductor;
(c) positive
voltage depletes
holes from the
semiconductor
surface; (d) a
larger positive
voltage causes
inversion-an
"n-type" layer at
the semiconductor
E.
(a)
EFs
E,
E
Fm
Metal
Oxidel
Semiconductor
V <0
Accumulation
(b)
E
E
surface.
- E;
EFS
E
V>0
Depletion
(c)
EF
E,
Efm
M
V>>0
Inversion
E.
(d)
E
EFS
E,
E pm
M
os](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F18a86834-407f-4186-af1c-f9ad51407fb5%2Fd2fd974e-5842-4bf2-a180-450de44889f2%2F0xxpwpyp_processed.png&w=3840&q=75)
Transcribed Image Text:277
Field Effect Transistors
Figure 6-12
Band diagram for
the ideal MOS
(V = 0)
structure at:
(a) equilibrium;
(b) negative
voltage causes
hole accumulation
in the p-type
semiconductor;
(c) positive
voltage depletes
holes from the
semiconductor
surface; (d) a
larger positive
voltage causes
inversion-an
"n-type" layer at
the semiconductor
E.
(a)
EFs
E,
E
Fm
Metal
Oxidel
Semiconductor
V <0
Accumulation
(b)
E
E
surface.
- E;
EFS
E
V>0
Depletion
(c)
EF
E,
Efm
M
V>>0
Inversion
E.
(d)
E
EFS
E,
E pm
M
os
![Field-Effect Transistors
279
Figure 6-13
Bending of the
semiconductor
bands at the
onset of strong
inversion: The
surface potential
d, is twice the
value of of in the
neutral p material.
EF
E,
Oxide | Semiconductor](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F18a86834-407f-4186-af1c-f9ad51407fb5%2Fd2fd974e-5842-4bf2-a180-450de44889f2%2Fdarf5f_processed.png&w=3840&q=75)
Transcribed Image Text:Field-Effect Transistors
279
Figure 6-13
Bending of the
semiconductor
bands at the
onset of strong
inversion: The
surface potential
d, is twice the
value of of in the
neutral p material.
EF
E,
Oxide | Semiconductor
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