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6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.

6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.
Transcribed Image Text:6.18 A semiconductor is uniformly doped with 107 cm³ acceptor atoms and has the fol- lowing properties: D = 27 cm²/s, D = 12 cm²/s, T = 5 × 10-7 s, and 7po = 10-7 s. An external source has been turned on for 1 <0 producing a uniform concentration of excess carriers at a generation rate of g = 10 cm³ s. The source turns off at time 1 = 0 and back on at time = 2 × 10-6 s. (a) Derive the expressions for the excess carrier concentration as a function of time for 01, (b) Determine the value of excess carrier concentration at (i) 1 = 0, (ii) 1 = 2 × 10-6 s, and (iii) t = x. (c) Plot the excess carrier concentration as a function of time.
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