50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm³ 5 x 10^22 4.4 x 10^22 Energy Gap, Eg. at OK (eV) 1.21 0.785 Energy Gap, Eg at 300K (eV) 1.12 0.72 Resistivity at 300K (ohm-cm) 2.3 x 10^5 45 Electron Mobility, µn at 300K (cm²/V-s) 1500 3800 Hole Mobility, u, at 300K (cm²/V-s) Intrinsic Concentration, n; at 300K (cm³) 475 1800 1.45 x 10^10 2.5 x 10^13 Electron Diffusion Constant, Dn at 300K (cm²/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm²/s) 13 47 Melting Point (°C) 1415 937

Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Question
A Germanium sample is 10 mm long and has a rectangular cross
A Boron atom with concentration of 2.4 x 1015/cm³ at 300 K is added. A steady current of
-section, 60 µm by 180 µm.
50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the
voltage across the bar.
TABLE OF CONSTANTS
Properties
Silicon
Germanium
Atomic Number
14
32
Atomic Weight
28.1
72.6
Density (g/cm³)
2.83
5.32
Relative Permittivity (Dielectric Constant)
11.9
16
Atoms/cm3
5х 10^22
4.4 x 10^22
Energy Gap, Eg, at OK (eV)
1.21
0.785
Energy Gap, Eg at 300K (eV)
1.12
0.72
Resistivity at 300K (ohm-cm)
2.3 x 10^5
45
Electron Mobility, un at 300K (cm?/V-s)
1500
3800
Hole Mobility, u, at 300K (cm?/V-s)
Intrinsic Concentration, n; at 300K (cm³)
475
1800
1.45 х 10^10
2.5 x 10^13
Electron Diffusion Constant, Dn at 300K (cm²/s)
34
99
Hole Diffusion Constant, Dp at 300K (cm²/s)
13
47
Melting Point (°C)
1415
937
Transcribed Image Text:A Germanium sample is 10 mm long and has a rectangular cross A Boron atom with concentration of 2.4 x 1015/cm³ at 300 K is added. A steady current of -section, 60 µm by 180 µm. 50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm3 5х 10^22 4.4 x 10^22 Energy Gap, Eg, at OK (eV) 1.21 0.785 Energy Gap, Eg at 300K (eV) 1.12 0.72 Resistivity at 300K (ohm-cm) 2.3 x 10^5 45 Electron Mobility, un at 300K (cm?/V-s) 1500 3800 Hole Mobility, u, at 300K (cm?/V-s) Intrinsic Concentration, n; at 300K (cm³) 475 1800 1.45 х 10^10 2.5 x 10^13 Electron Diffusion Constant, Dn at 300K (cm²/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm²/s) 13 47 Melting Point (°C) 1415 937
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