50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm³ 5 x 10^22 4.4 x 10^22 Energy Gap, Eg. at OK (eV) 1.21 0.785 Energy Gap, Eg at 300K (eV) 1.12 0.72 Resistivity at 300K (ohm-cm) 2.3 x 10^5 45 Electron Mobility, µn at 300K (cm²/V-s) 1500 3800 Hole Mobility, u, at 300K (cm²/V-s) Intrinsic Concentration, n; at 300K (cm³) 475 1800 1.45 x 10^10 2.5 x 10^13 Electron Diffusion Constant, Dn at 300K (cm²/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm²/s) 13 47 Melting Point (°C) 1415 937

50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm³ 5 x 10^22 4.4 x 10^22 Energy Gap, Eg. at OK (eV) 1.21 0.785 Energy Gap, Eg at 300K (eV) 1.12 0.72 Resistivity at 300K (ohm-cm) 2.3 x 10^5 45 Electron Mobility, µn at 300K (cm²/V-s) 1500 3800 Hole Mobility, u, at 300K (cm²/V-s) Intrinsic Concentration, n; at 300K (cm³) 475 1800 1.45 x 10^10 2.5 x 10^13 Electron Diffusion Constant, Dn at 300K (cm²/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm²/s) 13 47 Melting Point (°C) 1415 937

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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