5. In a P-type germanium, nį = 2.1 × 1019 m-³density of boran 4.5 x 1023 atoms /m³. The electron and hole mobility are 0.4 and 0.2 m? v1 s-1 respectively. conductivity before and after addition of boron atoms. What is its

Q: Estimate the resistivity of a Si sample doped with phosphorus to a concentration of 10 ^ 15 * c * m…

A: When Silicon is doped with phosphorus the majority of the charge carrier are electrons which means…

Q: Consider two reverse biased diodes. If the ratio of applied reverse bias voltages is 0.5, find the…

A: We need to find out capacitance ratio for given voltage ratio

Q: Consider an p-type silicon for which the dopant concentration ND 1018/cm3 Find the electron and hole…

A: In this question,  Choose the correct options If p type silicon dopant concentration ND = 1018  /cm3…

Q: -10-22 eV Conduction band Band gap Ey blence band "Bands" are composed of closely spaced orbitals a…

A:

Q: Consider an n-type silicon for which the dopant concentration ND= 1020/cm3. Find the electron and…

A: Given: Nd=1020/cm3 T=350 K ni=Intrinsic Concentration of Si=1.5*1010/cm3

Q: Silicon is doped with a phosphorus concentration of 2×1016/cm3. What are NA and ND? What are the…

A:

Q: 2.27 A diode is made by using an n-type Si substrate (Np = 4.0 × 1015 cm-3) and then adding…

A: We need to find electron and concentration in p side of a diode .

Q: The intrinsic carrier density at 300 K is 1.5x 10¹0 /cm³, in silicon. For n-type silicon doped to…

A:

Q: Suppose a drift current density of 2000 A/cm2 exists in the neutral region on the p-type side of a…

A: Given data, The value of drift current density (J) = 2000 A/cm2.

Q: Consider a palladium Schottky diode at T = 300 K formed on n-type germanium doped at N = 5 X 1018…

A:

Q: Silicon is doped with an indium concentration of 8x10^19 / cm^3. Is indium a donor or acceptor…

A: Given:NA ​= 8×1019 cm−3where NA​ is the acceptor concentration.

Q: A uniform bar of an n-type silicon has an electric field of 0.5V/cm applied across it. If ND=…

A: We need to find out drift velocity and drift current density .

Q: A diode with n =1.6 conducts 45 mA at 0.75V at room temperature. Find the saturation current Is at…

A: Given, Diode current, ID=45 mA Diode voltage at room temperature, VD=0.75 V n = 1.6

Q: Consider an n-type silicon for which the dopant concentration ND =10^16/cm^3 find the electon and…

A:

Q: The intrinsic carrier density at 300 K is 1.5 x 10¹0 /cm³ in silicon. For n-type silicon doped to…

A: Number of donors impurities Nd = 2.25×1015 cm-3 Number of intrinsic carriers = 1.5×1010 cm-3

Q: Find the resistivity of n-type silicon with ND = 10^15/cm3 at T=300K Assume that for intrinsic…

A:

Q: The formula used to fit ILED versus VLED was Y = a (1-e^-bx). Compare this equation to the shockley…

A: SOLUTION GIVEN-->                Y = a(1- e-bx)  Compare this…

Dielectric Breakdown

A dielectric is a material with low electrical conductivity and so is classified as an insulator. Dielectric materials are used to block the flow of electricity through them, allowing them to behave as an insulators. They can also be used to store electric charge or improve capacitance.Dielectrics have no free electrons for conduction because electrons are tightly bound to the nucleus. Because dielectrics contain a small number of electrons for electrical conductivity, they have a dipole. The two primary roles of dielectrics in electrical devices are insulation and electrical energy storage. An electric field polarizes the dielectric, and the polarization of the molecules allows dielectric materials to store charge.