30.23 Tetraethoxysilane, also called TEOS or Si(OC,H5)4, is a liquid chemical used in the semiconductor industry to produce thin films of silicon dioxide by chemical vapor deposition (CVD). In order to deliver the TEOS vapor to the CVD reactor, liquid TEOS is fed to a wetted-wall column. The TEOS liquid uniformly coats the inner surface of the tube as a thin liquid film asit flows downward. The falling liquid film of TEOS evaporates into an inert helium carrier gas flowing upwards at a volumetric flow rate of 2000 cm /s. The wetted-wall column has an inner diameter of 5 cm and a length of 2 m. The column temperature is maintained at 333 K, and the total system pressure is 1 atm. At 333 K, the kinematic viscosity of helium gas is 1.47 cm2/s, the diffusion coefficient of TEOS vapor in helium gas is 1.315 cm2/s, and the vapor pressure of liquid TEOS is 2,133 Pa. a. What is the gas mass-transfer coefficient, kG? b. What s the mole fraction of TEOS vapor exiting the column? c. What is the required mass flow rate of liquid TEOS flowing into the column if all of the liquid TEOS evaporates by the time it reaches the bottom of the column?
30.23 Tetraethoxysilane, also called TEOS or Si(OC,H5)4, is a liquid chemical used in the semiconductor industry to produce thin films of silicon dioxide by chemical vapor deposition (CVD). In order to deliver the TEOS vapor to the CVD reactor, liquid TEOS is fed to a wetted-wall column. The TEOS liquid uniformly coats the inner surface of the tube as a thin liquid film asit flows downward. The falling liquid film of TEOS evaporates into an inert helium carrier gas flowing upwards at a volumetric flow rate of 2000 cm /s. The wetted-wall column has an inner diameter of 5 cm and a length of 2 m. The column temperature is maintained at 333 K, and the total system pressure is 1 atm. At 333 K, the kinematic viscosity of helium gas is 1.47 cm2/s, the diffusion coefficient of TEOS vapor in helium gas is 1.315 cm2/s, and the vapor pressure of liquid TEOS is 2,133 Pa. a. What is the gas mass-transfer coefficient, kG? b. What s the mole fraction of TEOS vapor exiting the column? c. What is the required mass flow rate of liquid TEOS flowing into the column if all of the liquid TEOS evaporates by the time it reaches the bottom of the column?
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Transcribed Image Text:30.23 Tetraethoxysilane, also called TEOS or Si(OC,H5)4, is
a liquid chemical used in the semiconductor industry to produce
thin films of silicon dioxide by chemical vapor deposition
(CVD). In order to deliver the TEOS vapor to the CVD reactor,
liquid TEOS is fed to a wetted-wall column. The TEOS liquid
uniformly coats the inner surface of the tube as a thin liquid film
asit flows downward. The falling liquid film of TEOS evaporates
into an inert helium carrier gas flowing upwards at a volumetric
flow rate of 2000 cm /s. The wetted-wall column has an inner
diameter of 5 cm and a length of 2 m. The column temperature is
maintained at 333 K, and the total system pressure is 1 atm. At
333 K, the kinematic viscosity of helium gas is 1.47 cm2/s, the
diffusion coefficient of TEOS vapor in helium gas is
1.315 cm2/s, and the vapor pressure of liquid TEOS is 2,133 Pa.
a. What is the gas mass-transfer coefficient, kG?
b. What s the mole fraction of TEOS vapor exiting the
column?
c. What is the required mass flow rate of liquid TEOS flowing
into the column if all of the liquid TEOS evaporates by the
time it reaches the bottom of the column?
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