26.20 The data provided in Figure 26.7 are based on the diffusion of O₂ into SiO₂ formed from the oxidation of (100) crystalline silicon at 1000°C. Estimate the diffusion coefficient of O₂ in SiO₂ formed from the oxidation of (111) crystalline silicon at 1000° C, using the data in the table below, provided by Hess (1990).* Time 1.0 2.0 4.0 7.0 16.0 Measured SiO₂ Film Thickness (um) 0.049 0.078 0.124 0.180 0.298 0.070 0.105 0.154 0.212 0.339 The maximum solubility of O₂ in the SiO₂ is 9.6-10-8 mole 0₂/cm³ solid at 1000°C and 1.0 atm O₂ gas partial pressure. *D.W. Hess, Chem. Eng. Education, 24, 34 (1990).
26.20 The data provided in Figure 26.7 are based on the diffusion of O₂ into SiO₂ formed from the oxidation of (100) crystalline silicon at 1000°C. Estimate the diffusion coefficient of O₂ in SiO₂ formed from the oxidation of (111) crystalline silicon at 1000° C, using the data in the table below, provided by Hess (1990).* Time 1.0 2.0 4.0 7.0 16.0 Measured SiO₂ Film Thickness (um) 0.049 0.078 0.124 0.180 0.298 0.070 0.105 0.154 0.212 0.339 The maximum solubility of O₂ in the SiO₂ is 9.6-10-8 mole 0₂/cm³ solid at 1000°C and 1.0 atm O₂ gas partial pressure. *D.W. Hess, Chem. Eng. Education, 24, 34 (1990).
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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Transcribed Image Text:26.20 The data provided in Figure 26.7 are based on the
diffusion of O₂ into SiO₂ formed from the oxidation of (100)
crystalline silicon at 1000°C. Estimate the diffusion coefficient
of O₂ in SiO₂ formed from the oxidation of (111) crystalline
silicon at 1000 °C, using the data in the table below, provided by
Hess (1990).*
Time
1.0
2.0
4.0
7.0
16.0
Measured SiO₂ Film
Thickness (um)
0.049
0.078
0.124
0.180
0.298
0.070
0.105
0.154
0.212
0.339
The maximum solubility of O₂ in the SiO₂ is 9.6-10-8 mole
0₂/cm³ solid at 1000°C and 1.0 atm O₂ gas partial pressure.
*D.W. Hess, Chem. Eng. Education, 24, 34 (1990).
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