**Transcription for Educational Website**---### Problem 3: Quantum Tunneling in a Semiconductor DeviceIn a particular semiconductor device, an oxide layer forms a barrier 0.6 nm wide and 9V high between two conducting wires. An electron beam is accelerated through a 4V potential so that each electron approaches the barrier with an energy of 4 eV.#### (a) Calculation Task:What percent of the incident electrons will tunnel through the barrier?#### (b) Analysis Task:Is \( \alpha a \) for this system much larger than one, much less than one, or the same order of magnitude as one? Can we approximate the transmission coefficient using the formula below?\[T = 16 \frac{E}{V_0} \left(1 - \frac{E}{V_0}\right) e^{-2\alpha a} \quad \text{(1)}\]#### (c) Application Task:Find the transmission coefficient using Eq. 1 and compare with your answer from part (a). Was Eq. 1 a good approximation?--- #### Explanation of Formula (Eq. 1):This formula provides the transmission coefficient \( T \) for an electron tunneling through a potential barrier, where \( E \) is the electron's energy, \( V_0 \) is the barrier potential, \( \alpha \) is a constant derived from the system properties, and \( a \) is the width of the barrier. The equation helps determine the probability of electron tunneling based on these parameters.

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Answered: 3. In a particular semiconductor…

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