3. In a particular semiconductor device, an oxide layer forms a barrier 0.6 nm wide and 9V high between two conducting wires. An electron beam is accelerated through a 4V potential so that each electron approach the barrier with an energy of 4 eV. (a) What percent of the incident electrons will tunnel through the barrier? (b) Is aa for this system much larger than one, much less than one, or the same order of magnitude as one? Can we approximate the transmission coefficient using the formula below? = 16 (1-2) e- E Vo T= -2aa (1) (c) Find the transmission coefficient using Eq. 1 and compare with your answer from part (a). Was Eq. 1 a good approximation?

3. In a particular semiconductor device, an oxide layer forms a barrier 0.6 nm wide and 9V high between two conducting wires. An electron beam is accelerated through a 4V potential so that each electron approach the barrier with an energy of 4 eV. (a) What percent of the incident electrons will tunnel through the barrier? (b) Is aa for this system much larger than one, much less than one, or the same order of magnitude as one? Can we approximate the transmission coefficient using the formula below? = 16 (1-2) e- E Vo T= -2aa (1) (c) Find the transmission coefficient using Eq. 1 and compare with your answer from part (a). Was Eq. 1 a good approximation?