Solve 3a), 3b), 3c) showing all the steps properly 3. For each of the following crystal structures:(a) Simple Crystal (SC)(b) Face-Centered Cubic (FCC)(c) Body-Centered Cubic (BCC)Draw the crystal planes corresponding to the following Miller Indicesand calculate Planar Density (PD) in both (#atoms/R²) and (%) units:(i)(ii)(100)(110)(iii) (111)Draw the planes as accurately as possible with respect to the atomic stacking of each unitcell. Explain your reasoning for choosing said values for each of the parameters.

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Answered: 3. For each of the following crystal…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Consider an n-type silicon for which the dopant concentration Np= 1016/cm. Find the electron and hole concentrations at T=350 K. electron = 1016/cm³ & holes= 17.22 × 106 cm3 electron = 2.25 × 104/cm3 & holes= 2.25 x 104/cm3 electron = 17.22 × 100 /cm³ & holes= 1016/cm3 electron = 106/cm3 & holes= 1016 cm3
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The circle is below(for D1-1N4148 is 1N4148 Diode). and also there have a table(. Note that the first 3 rows of measurement are obtained when the diode is reverse-biased) Vout_dc (V) VD (V) ID (μA) 0.51 -0.51 0.0 0.23 -0.20 0.0 0.10 -0.08 0.0 0.00 0.00 0.0 0.05 0.04 0.0 0.11 0.09 0.0 0.17 0.15 0.1 0.19 0.20 0.1 0.27 0.25 0.4 0.32 0.30 1.6 0.36 0.34 3.1 0.42 0.40 8.2 0.46 0.42 14.3 0.52 0.47 28.0 Questions: 1) plot the diode’s I-V characteristics on a linear scale (ID on the y-axis and VD on the x-axis) 2) [RP4] 3) [RP5]
A pn diode is a semiconductor device in which, unlike in a metal, the current flow is due not only to negative electron charge flow but also due to positive charges. The positive charges are usually referred to as holes, as they are really "deficit" in the negative charge distribution. The semiconduction material (usually silicon with Er = 11 or gallium arsenide with e, impurities are added. Initially, the physically important region on the p side contains a density p+ of positive charges per unit volume, whereas the n region contains a negative charge density p-. When they are brought in contact, a static equilibrium follows in which a surplus of negative charges will accumulate in the (thin) p region, and a surplus of positive charges will accumulate in the (much thicker) n region. These two layers produce an electric field similar to that of a capacitor with infinite parallel plates. In equilibrium, the total number of positive charges in the n region is equal to the number of…
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