Please solve asap. 3. An aluminum thin film is deposited onto an 8" diameter silicon wafer by thermalevaporation from a crucible cup (it can only evaporate upwards and so it will coat ahemispherical shell above the crucible). The crucible has a diameter 1 cm, and the wafer ispositioned directly over it with 0° angular tilt. Deposition occurs at 1.5 × 10-6 Torr.a) The thickness of the aluminum is measured to be 0.5 um at the centre of the silicon wafer.The thickness at the edge of the wafer is 0.3 µm. Calculate the distance of the wafer fromthe crucible source?b) What is the rate of aluminum deposition onto the wafer, at the center of the wafer, if thedeposition is done at 1100°C? Use aluminum density of 2.7 g/cm³.c) Will this evaporation processes result in good quality aluminum, and if not, how might youimprove it? Justify your answer.

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3. An aluminum thin film is deposited onto an 8" diameter silicon wafer by thermal evaporation from a crucible cup (it can only evaporate upwards and so it will coat a hemispherical shell above the crucible). The crucible has a diameter 1 cm, and the wafer is positioned directly over it with 0° angular tilt. Deposition occurs at 1.5 × 10-6 Torr. a) The thickness of the aluminum is measured to be 0.5 µm at the centre of the silicon wafer. The thickness at the edge of the wafer is 0.3 µm. Calculate the distance of the wafer from the crucible source? b) What is the rate of aluminum deposition onto the wafer, at the center of the wafer, if the deposition is done at 1100°C? Use aluminum density of 2.7 g/cm³.

3. An aluminum thin film is deposited onto an 8" diameter silicon wafer by thermal evaporation from a crucible cup (it can only evaporate upwards and so it will coat a hemispherical shell above the crucible). The crucible has a diameter 1 cm, and the wafer is positioned directly over it with 0° angular tilt. Deposition occurs at 1.5 × 10-6 Torr. a) The thickness of the aluminum is measured to be 0.5 µm at the centre of the silicon wafer. The thickness at the edge of the wafer is 0.3 µm. Calculate the distance of the wafer from the crucible source? b) What is the rate of aluminum deposition onto the wafer, at the center of the wafer, if the deposition is done at 1100°C? Use aluminum density of 2.7 g/cm³.

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)

8th Edition

ISBN:9781305387102

Author:Kreith, Frank; Manglik, Raj M.

Publisher:Kreith, Frank; Manglik, Raj M.

Chapter11: Heat Transfer By Radiation

Section: Chapter Questions

Problem 11.3DP

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