3. An aluminum thin film is deposited onto an 8" diameter silicon wafer by thermal evaporation from a crucible cup (it can only evaporate upwards and so it will coat a hemispherical shell above the crucible). The crucible has a diameter 1 cm, and the wafer is positioned directly over it with 0° angular tilt. Deposition occurs at 1.5 × 10-6 Torr. a) The thickness of the aluminum is measured to be 0.5 µm at the centre of the silicon wafer. The thickness at the edge of the wafer is 0.3 µm. Calculate the distance of the wafer from the crucible source? b) What is the rate of aluminum deposition onto the wafer, at the center of the wafer, if the deposition is done at 1100°C? Use aluminum density of 2.7 g/cm³.
3. An aluminum thin film is deposited onto an 8" diameter silicon wafer by thermal evaporation from a crucible cup (it can only evaporate upwards and so it will coat a hemispherical shell above the crucible). The crucible has a diameter 1 cm, and the wafer is positioned directly over it with 0° angular tilt. Deposition occurs at 1.5 × 10-6 Torr. a) The thickness of the aluminum is measured to be 0.5 µm at the centre of the silicon wafer. The thickness at the edge of the wafer is 0.3 µm. Calculate the distance of the wafer from the crucible source? b) What is the rate of aluminum deposition onto the wafer, at the center of the wafer, if the deposition is done at 1100°C? Use aluminum density of 2.7 g/cm³.
Elements Of Electromagnetics
7th Edition
ISBN:9780190698614
Author:Sadiku, Matthew N. O.
Publisher:Sadiku, Matthew N. O.
ChapterMA: Math Assessment
Section: Chapter Questions
Problem 1.1MA
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