2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.
2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.
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2. Total current in a semiconductor is constant and is composed of
electron drift current and hole diffusion current. The electron
concentration is constant and equal to 5 x 1015 cm-3
Hole concentration is given by
p(x) %—D 2 х 1015 еxр (--)
exp
ст3
for x >0
where L = 10 µm.
Hole diffusion coefficient is D, =
12 cm²/s. Electron mobility is
Un = 1000 cm?/V-s. Total current density is J = 4.5 A/cm?.
(a) Calculate hole diffusion current density versus x
(b) Electron current density versus x
(c) Electric field versus x.
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