2. For Si at 300K, the intrinsic carrier concentration, n=1.5x1016 carrier/m², the electron and hol mobilities in Si, pa=0.135 m²/(vs), and 4,=0.048 m³/(vs). A Silicon wafer is doped with 1.0×101º boro atoms/cm' plus 1.6×1019 phosphorus atoms/cm'. (a) Calculate the minority-carrier concentration. (b) Calculate the electrical resistivity of this silicon wafer at 300K. (The charge of electron e=1.6×10-1ºC.)

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2. For Si at 300K, the intrinsic carrier concentration, n=1.5×1016 carrier/m', the electron and hole
mobilities in Si, pu=0.135 m2/(vs), and 4,=0.048 m²/(vs). A Silicon wafer is doped with 1.0×1019 boron
atoms/cm? plus 1.6x1019 phosphorus atoms/cm.
(a) Calculate the minority-carrier concentration.
(b) Calculate the electrical resistivity of this silicon wafer at 300K. (The charge of electron e=1.6×1019C.)
Transcribed Image Text:2. For Si at 300K, the intrinsic carrier concentration, n=1.5×1016 carrier/m', the electron and hole mobilities in Si, pu=0.135 m2/(vs), and 4,=0.048 m²/(vs). A Silicon wafer is doped with 1.0×1019 boron atoms/cm? plus 1.6x1019 phosphorus atoms/cm. (a) Calculate the minority-carrier concentration. (b) Calculate the electrical resistivity of this silicon wafer at 300K. (The charge of electron e=1.6×1019C.)
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