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- (a) In the band theory of solids, describe the band structures of: conductors, insulators, and (intrinsic) semiconductors b) Explain how doping may be used to create extrinsic n-type and p-type semiconductors. c) Describe the structure and operation of a p-n junction as a diode rectifier2.) Is the total concentration of current carriers (free electrons and holes) in a semicon- ductor equal to the concentration of valence electrons? 3.) There are two types of current carriers in semiconductors (free electrons and holes) and only one type in metals. Yet, metals are much better conductors of electric current. Is this because the currents of electrons and holes oppose each other?Using the transistor output characteristic determine the values of α and β for a transistor whose iB = 20 µA
- Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)Explain how a metal-oxide semiconductor field-effect transistor (MOSFET) acts as a transistor. Explain how it functions as a transistor by describing its parts and how they work.