Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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What is the Arsenic concentration (number of atoms/m) in Ge for which room temperature conductivity is 1.6 x 104 (2-m)1?
Table 12.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic
Electrical Conductivities at Room Temperature for
Semiconducting Materials
Band Gap
(eV)
Electrical Conductivity
[(2-m)-1
Electron Mobility
(m²/V-s)
Hole Mobility
(m²/V-s)
Material
Elemental
Si
1.11
4 x 10-4
0.14
0.05
Ge
0.67
2.2
0.38
0.18
III-V Compounds
GaP
2.25
0.03
0.015
GaAs
1.42
10-6
0.85
0.04
InSb
0.17
2 x 104
7.7
0.07
II-VI Compounds
CdS
2.40
0.03
ZnTe
2.26
0.03
0.01
O 5.56 x 1023
none of these answers
О 263 х 1023
O 7.14 x 1023
O 1.43 x 1024
Transcribed Image Text:What is the Arsenic concentration (number of atoms/m) in Ge for which room temperature conductivity is 1.6 x 104 (2-m)1? Table 12.3 Band Gap Energies, Electron and Hole Mobilities, and Intrinsic Electrical Conductivities at Room Temperature for Semiconducting Materials Band Gap (eV) Electrical Conductivity [(2-m)-1 Electron Mobility (m²/V-s) Hole Mobility (m²/V-s) Material Elemental Si 1.11 4 x 10-4 0.14 0.05 Ge 0.67 2.2 0.38 0.18 III-V Compounds GaP 2.25 0.03 0.015 GaAs 1.42 10-6 0.85 0.04 InSb 0.17 2 x 104 7.7 0.07 II-VI Compounds CdS 2.40 0.03 ZnTe 2.26 0.03 0.01 O 5.56 x 1023 none of these answers О 263 х 1023 O 7.14 x 1023 O 1.43 x 1024
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