10.9 The collector characteristics for a certain transistorare shown in Figure P10.9.a. Find the ratio Ic/Ig for Vcg = 10 V and Ig = 100,200, and 600 µA.b. The maximum allowable collector powerdissipation is 0.5 W for Ig = 500 µA. Find Vce.ic, mA10090600 μΑ.80500 µA70400 μΑ.60300 μΑ5040200 µA30I3 = 100 µA2010O 2 4 6 8 10 12 14 16 18"CE, VFigure P10.9Hint: A reasonable approximation for the power dissipatedat the collector is the product of the collector voltage andcurrent P = Ic VCE, where P is the permissible powerdissipation, Ic is the quiescent collector current, and Vcg isthe operating point collector-emitter voltage.

The collector characteristics of the transistor is:

Answered: 10.9 The collector characteristics for…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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The emitter current is always… Greater than the base current equal to the collector current Less than the collector current Less than the base current
D Question 4 Find the base and collector currents for each of the following two circuits. Assume a base- emitter voltage of 0.7. R1 1 Meg R1 1 Meg. R2 5k Q1 generic AND .op .model generic NPN(BF=100) R2 10k Q1 generic R3 10k + .op .model generic NPN(BF=100) Vcc Vcc 10.7 10.7
Draw the structure (cross-section) of two MOSFET types that have positive threshold voltages. Show the terminals and place appropriate labels clearly.
1- a. For the circuits given below calculate the currents through the zener diode (V5.1V) and the current through the Si-diode. 1k Ohm 1k Ohm -10V 1k Ohm 12V b. The emitter of an NPN type BJT is connected to ground. Its base is connected to a 5V supply with a 10K resistor. Its collector is connected to the same supply with a 6K resistor. Calculate the range of ß such that the transistor is not saturated.
In the figure, A characteristics curve is shown for the MOSFET. Determine the following outcome and parameters using the values given in the characteristics: i) Find the Ip for the VGs = 4V, where IGs(ON) = 4.5mA ii) Find the transconductence of MOSFET; where, MOSFET having the bias voltage VGs = 4V, and 6V. %3D A (mA) A5 (mA) 10 10 VGs=+8 V 9. 7 .7 VGs =+7 V 6 5 Vas=+6 V 4 VGs =+5 V 2 VGs =+4 V Vas =+3 V 1 3 4. 5 8 Vas 10 15 20 25 Vos Vas = VT=2 V a co
Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
8.
In reference to the given figure, VCB = 10.3V and VBE = 0.7V. NOTES: VCB = VC-VB VBE = VB-VE In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RC, in kilo-ohms? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the voltage of RB, in volts? In reference to Figure 2, given the dc load line and the transistor circuit, what will be the value of RB in kilo-ohms, if Beta=100?
Calculate the power at the maximum power point of each cell and their cell efficiency.
Please answer 1 and 2 in step by step solution
Design a voltage divider biased CE stage with emitter degeneration. That stage should support a voltage gain of 5 and an input impedance larger than 3 KOhms with a bias current of 0.5 mA. Assume Beta=100, Is = 5e-17. Neglect the early voltage effect. You also need to provide values for the operating point of this transistor. Find the output resistance of this stage if the early voltage = 20 V.

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