1.00E+00 1.00E-02 1.00E-04 1.00E-06 Subthreshold < 1.00E-08 E region 1.00E-10 1.00E-12 Normal triode or saturation 1.00E-14 1.00E-16 region conduction 1.00E-18 VIN 1.00E-20 1.00E-22 0.5 1.5 2.5 Gate-source voltage (V) Figure 4.21 Subthreshold conduction in an NMOS transistor with VTN = 1 V. Drain current (A)
1.00E+00 1.00E-02 1.00E-04 1.00E-06 Subthreshold < 1.00E-08 E region 1.00E-10 1.00E-12 Normal triode or saturation 1.00E-14 1.00E-16 region conduction 1.00E-18 VIN 1.00E-20 1.00E-22 0.5 1.5 2.5 Gate-source voltage (V) Figure 4.21 Subthreshold conduction in an NMOS transistor with VTN = 1 V. Drain current (A)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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Question
What is the leakage current in the device for VGS = 0.25 V?
(b) Suppose the transistor had VTN = 0.5 V. What will be the leakage current for VGS = 0 V? (c) A memory chip uses 109 of the transistors in part (b). What is the total leakage
current if VGS = 0 V for all the transistors?
![1.00E+00
1.00E-02
1.00E-04
1.00E-06
Subthreshold
< 1.00E-08 E
region
1.00E-10
1.00E-12
Normal triode or
saturation
1.00E-14
1.00E-16
region conduction
1.00E-18
VIN
1.00E-20
1.00E-22
0.5
1.5
2.5
Gate-source voltage (V)
Figure 4.21 Subthreshold conduction in an NMOS transistor with VTN = 1 V.
Drain current (A)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F01e4d4b4-9c93-4439-9d97-efe8ac25d387%2F1068e471-8f51-472c-9929-11b63b5dcd18%2Fzdvs0x8.png&w=3840&q=75)
Transcribed Image Text:1.00E+00
1.00E-02
1.00E-04
1.00E-06
Subthreshold
< 1.00E-08 E
region
1.00E-10
1.00E-12
Normal triode or
saturation
1.00E-14
1.00E-16
region conduction
1.00E-18
VIN
1.00E-20
1.00E-22
0.5
1.5
2.5
Gate-source voltage (V)
Figure 4.21 Subthreshold conduction in an NMOS transistor with VTN = 1 V.
Drain current (A)
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