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2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel.

2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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C. depletion or enhancement mode device. d. None of the above. 2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage. b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.
Transcribed Image Text:C. depletion or enhancement mode device. d. None of the above. 2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage. b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.
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