2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage. b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.

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Question 4

2. In an IGFET, gate current
a. flows for positive bias voltage.
b. does not flow.
c. flows for negative bias voltage.
d. will damage the channel.
3. When compared to the zero bias characteristic, an in drain current
a. means that a channel is enhanced.
b. has no effect on the device channel.
C. means that a channel is depleted.
d. will damage the channel.
4. The IGFET does not draw gate current because
a. the gate diode has a high avalanche breakdown voltage.
b. the gate PN junction has a silicon dioxide barrier.
c. bias voltage is always lower the 0.7 Vdc.
d. its gate terminal is isolated from the channel.
5. A dual gate MOSFET
a. provides low input impedance.
b. can operate as a single gate device.
c. requires two PN junctions.
d. draws gate current for one of its gates.
Transcribed Image Text:2. In an IGFET, gate current a. flows for positive bias voltage. b. does not flow. c. flows for negative bias voltage. d. will damage the channel. 3. When compared to the zero bias characteristic, an in drain current a. means that a channel is enhanced. b. has no effect on the device channel. C. means that a channel is depleted. d. will damage the channel. 4. The IGFET does not draw gate current because a. the gate diode has a high avalanche breakdown voltage. b. the gate PN junction has a silicon dioxide barrier. c. bias voltage is always lower the 0.7 Vdc. d. its gate terminal is isolated from the channel. 5. A dual gate MOSFET a. provides low input impedance. b. can operate as a single gate device. c. requires two PN junctions. d. draws gate current for one of its gates.
Expert Solution
Step 1 correct explanation

Since there are multiple questions uploaded so solving the relevant question. Also it is asked to solve only question (4), so solving the same too.

Kindly specify which question is to be solved exactly.

1. In an IGFET , gate current 

     Thus the correct answer is option (b) because in case of an IGFET the Gate is insulated from the main current and hence the name Insulated Gate Field Effect Transistor or MOSFET also.

4. The IGFET does not draw gate current because

      the correct answer is option (d) which states that the Gate terminal is isolated from the channel and hence no current flows into the Gate terminal and all the main current flows from drain to source terminal only. 

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