1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. TheMOSFET has V₁=0.5V, unCox=400uA/V², L=0.4um, W=5um. Specify the required values for Rs and RD.

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Answered: 1. Design the circuit of Fig. 1 to…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Determine Ic lg le respectively for the PNP transistor shown in the figure below. Assume Is = 1x10-16 A. V = 26mV. B = 50, VA = ", and Rc = 0.1 KQ. %3D Q1 Vcc 2 V 1.2 V- Rc Select one: O a. 2.306 mA, 0.046 mA, 2.352 mA O b. 5.766 mA, 0.115 mA, 5.881 mA O c. None of these O d. 11.531 mA, 0.231 mA, 11.762 mA Actv
21. Ipss = 20 mA and Vgs(off) = –-6 V for a particular JFET. %3D (a) What is Ip when Vcs = 0 V? (b) What is Ip when VGs = VGs(off? (c) If Vcs is increased from -4 V to –1 V, does I, increase or decrease?
Kindly answer the following question (as soon as possible) #24
The NMOS in the circuit below has k = 1.2 mA/V² and VTH = 2.4 V. Vi = 5 V. V₁ ww 1 ΚΩ IDS 12 V 2.2 ΚΩ Vo 1.2 ΚΩ A. Assuming that the FET is in saturation, write an expression that solves for the drain current los. The equation SHOULD have 0 as the equivalent. Meaning the expression should be 0 = expression Use variable I as the drain current. After getting the expression, solve the drain current. B. Find the circuit's -Gate to source voltage VGS -Drain to source voltage Vos -V₂ -The NMOS' region of operation (saturation, cutoff, linear)
Consider the n-channel MOSFET with tox = 9 nm, µn = 500 cm2/V-s, V = 0.7V, and W/L = 10. Find the drain current and determine the mode of operation in the following cases: a) VGs = 5V and Vps = 1V b) VGs = VDs = 5V.
Determine the value of Vx and the mode of operation for the PNP transistor shown below. Assume Is = 1x1016 A, B = 50, VA = 00, and Rc = 0.1 KQ. %3D %3D 01 Vcc 2V X 1.2 V Rc Select one: O a. 0.577 V, Active Mode b. 0.23 V, Active Mode O c. 1.153 V, Active Mode O d. 2.306 V, Saturation Mode e. None of these EN 11:21 PM
Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kf
4. Sketch the drain characteristics of the JFET from the obtained data. 5. From the linear region of the drain characteristic, determine the value of the drain to source resistance rds when VGs = 0V. FRMA) Ves-4 0.5 VDS (V) Ipha) 1.2 2.4 2.1 2-7 2.9 3.2 3.2 3.2 3.2 2.5 1.5 2.3 3. 3.5 2.5 3. 4.3 3.2 5. 6. 3.1 3.3 3.3 ら./ 8. 6. ちil 5.2 la 10 3.2
Find Vps (in Volts) in the figure below. For the particular JFET in this circuit, the parameter values such as gm, VGs(off), and Ipss are such that a drain current (Ip) of approximately 6 mA is produced. Another JFET, even of the same type, may not produce the same results when connected in this circuit due to the variations in parameter values. VDD Ip Rp VG =0 V RG Rs Given component values: VDD = 17 V Rp = 1,073 ohms %3D RG = 10,562,313 ohms Rs = 317 ohms
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Find Rout. The internal resistance of MOS transistor will not be neglected. Transistors aren't the same, so their gm values aren't the same.
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1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. The MOSFET has V₁=0.5V, unCox=400uA/V², L=0.4um, W=5um. Specify the required values for Rs and RD.