1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature coefficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).
1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C. a) Does the material have a positive or a negative temperature coefficient? Explain briefly. b) Determine the value of the temperature coefficient, a, at 20°C. c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).
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![44%
P 8:02
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1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C.
a) Does the material have a positive or a negative temperature coefficient? Explain briefly.
b) Determine the value of the temperature coefficient, a, at 20°C.
c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of
the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).
2. Find the equivalent resistance Rab in the circuits of Figure below.
a o
102
60 Ω
30 Ω
bo
ww
ww
20 Ω
3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a
device of increasing importance in electronic design. (Biasing simply means the application of de
levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with
the FET, you can perform the following analysis using only the basic laws introduced in your lectures
and the information provided on the diagram.
a. Determine the voltages VG and Vs.
b. Find the currents /1, /2, Ip. and Is.
c. Determine Vps.
d. Calculate DG.
VDD = 16 V
오
R2 MN
Rp2.5 kn
OD
V'as = -1.75 V 1 IG
IG = 0A
In = Is
VGS
o's
R2270 kn
Rs1.5 kn
4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from
2mA source.
ww
1kO
ww
2 kn
V.1kn
2v
31kn
1000
2 mA
V.](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fa5773ae1-8236-4235-9ae4-92aeb2339a7b%2Fe58e2693-44dd-4f22-a09d-d5d6a3aff1a2%2Fr0sry_processed.jpeg&w=3840&q=75)
Transcribed Image Text:44%
P 8:02
* ZAIN IQ I.
med1.pdf
1. A given material has a resistance of 20 2 at room temperature (20°C) and 25 2 at a temperature of 85°C.
a) Does the material have a positive or a negative temperature coefficient? Explain briefly.
b) Determine the value of the temperature coefficient, a, at 20°C.
c) Assuming the resistance versus temperature function to be linear, determine the expected resistance of
the material at 0°C (the freezing point of water) and at 100°C (the boiling point of water).
2. Find the equivalent resistance Rab in the circuits of Figure below.
a o
102
60 Ω
30 Ω
bo
ww
ww
20 Ω
3. The network of Figure below is the basic biasing arrangement for the field-effect transistor (FET), a
device of increasing importance in electronic design. (Biasing simply means the application of de
levels to establish a particular set of operating conditions.) Even though you may be unfamiliar with
the FET, you can perform the following analysis using only the basic laws introduced in your lectures
and the information provided on the diagram.
a. Determine the voltages VG and Vs.
b. Find the currents /1, /2, Ip. and Is.
c. Determine Vps.
d. Calculate DG.
VDD = 16 V
오
R2 MN
Rp2.5 kn
OD
V'as = -1.75 V 1 IG
IG = 0A
In = Is
VGS
o's
R2270 kn
Rs1.5 kn
4. Find Vo in the circuit in Figure below using nodal analysis also find the power delivered from
2mA source.
ww
1kO
ww
2 kn
V.1kn
2v
31kn
1000
2 mA
V.
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